Infineon IKP20N60TXKSA1 IGBT, 41 A 600 V, 3-Pin TO-220, Through Hole

RS-artikelnummer:: 170-2371
Tillv. art.nr:: IKP20N60TXKSA1
Tillverkare / varumärke:: Infineon

Infineon IKP20N60TXKSA1 IGBT, 41 A 600 V, 3-Pin TO-220, Through Hole

Mängdrabatt möjlig

Antal (1 förpackning med 10 enheter)*

219,41 kr

(exkl. moms)

274,26 kr

(inkl. moms)

GRATIS leverans för online beställningar över 500,00 kr

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Dessutom levereras 2 480 enhet(er) från den 22 december 2025

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Enheter	Per enhet	Per förpackning*
10 - 10	21,941 kr	219,41 kr
20 - 40	20,843 kr	208,43 kr
50 - 90	19,97 kr	199,70 kr
100 - 240	18,659 kr	186,59 kr
250 +	17,562 kr	175,62 kr

*vägledande pris

RS-artikelnummer:: 170-2371
Tillv. art.nr:: IKP20N60TXKSA1
Tillverkare / varumärke:: Infineon

Specifikationer

Datablad

Lagstiftning och ursprungsland

Produktdetaljer

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Välj alla	Attribut	Värde
	Brand	Infineon
	Maximum Continuous Collector Current	41 A
	Maximum Collector Emitter Voltage	600 V
	Maximum Gate Emitter Voltage	±20V
	Number of Transistors	1
	Maximum Power Dissipation	166 W
	Package Type	TO-220
	Mounting Type	Through Hole
	Channel Type	N
	Pin Count	3
	Transistor Configuration	Single
	Dimensions	10.36 x 4.57 x 15.95mm
	Minimum Operating Temperature	-40 °C
	Maximum Operating Temperature	+175 °C
	Energy Rating	0.77mJ

	Välj alla
	Brand Infineon
	Maximum Continuous Collector Current 41 A
	Maximum Collector Emitter Voltage 600 V
	Maximum Gate Emitter Voltage ±20V
	Number of Transistors 1
	Maximum Power Dissipation 166 W
	Package Type TO-220
	Mounting Type Through Hole
	Channel Type N
	Pin Count 3
	Transistor Configuration Single
	Dimensions 10.36 x 4.57 x 15.95mm
	Minimum Operating Temperature -40 °C
	Maximum Operating Temperature +175 °C
	Energy Rating 0.77mJ

Infineon IGBT

The Infineon IGBT is a 3-pin N-channel TO-220 through-hole mount transistor. It has a current rating of 41A and a voltage rating of 600V 3rd generation reverse conducting IGBT optimized for lower switching and conduction losses. Its soft switching behaviour allows for better performance and EMI behaviour. With the help of this transistor excellent performance can be achieved at lower costs.

Features and Benefits

• Cost efficient
• High efficiency
• Low EMI emissions
• Low switching losses
• Lowest V ce (sat) drop for lower conduction losses
• Maximum power dissipation is 166W
• Operating temperature ranges between -40°C and 175°C
• Reduced power dissipation
• Surge current capability
• Very soft, fast recovery anti-parallel emitter controlled diode

Applications

• Home appliances
• Induction cooking stoves
• Industrial drives
• Microwave ovens
• Rice cookers
• UPS
• Welding

Certifications

• ANSI/ESD S20.20:2014
• BS EN 61340-5-1:2007