STMicroelectronics STGB10NC60KDT4 IGBT, 20 A 600 V, 3-Pin D2PAK (TO-263), Surface Mount
- RS-artikelnummer:
- 795-8975
- Tillv. art.nr:
- STGB10NC60KDT4
- Tillverkare / varumärke:
- STMicroelectronics
Mängdrabatt möjlig
Antal (1 förpackning med 5 enheter)*
64,15 kr
(exkl. moms)
80,20 kr
(inkl. moms)
GRATIS leverans för online beställningar över 500,00 kr
I lager
- 55 enhet(er) är redo att levereras
- Dessutom levereras 2 155 enhet(er) från den 24 december 2025
Behöver du mer? Ange den kvantitet du behöver och klicka på "Kontrollera leveransdatum"
Enheter | Per enhet | Per förpackning* |
|---|---|---|
| 5 - 5 | 12,83 kr | 64,15 kr |
| 10 + | 12,186 kr | 60,93 kr |
*vägledande pris
- RS-artikelnummer:
- 795-8975
- Tillv. art.nr:
- STGB10NC60KDT4
- Tillverkare / varumärke:
- STMicroelectronics
Specifikationer
Datablad
Lagstiftning och ursprungsland
Produktdetaljer
Hitta liknande produkter genom att välja ett eller flera attribut.
Välj alla | Attribut | Värde |
|---|---|---|
| Brand | STMicroelectronics | |
| Maximum Continuous Collector Current | 20 A | |
| Maximum Collector Emitter Voltage | 600 V | |
| Maximum Gate Emitter Voltage | ±20V | |
| Maximum Power Dissipation | 65 W | |
| Package Type | D2PAK (TO-263) | |
| Mounting Type | Surface Mount | |
| Channel Type | N | |
| Pin Count | 3 | |
| Switching Speed | 1MHz | |
| Transistor Configuration | Single | |
| Dimensions | 10.4 x 9.35 x 4.6mm | |
| Minimum Operating Temperature | -55 °C | |
| Maximum Operating Temperature | +150 °C | |
| Välj alla | ||
|---|---|---|
Brand STMicroelectronics | ||
Maximum Continuous Collector Current 20 A | ||
Maximum Collector Emitter Voltage 600 V | ||
Maximum Gate Emitter Voltage ±20V | ||
Maximum Power Dissipation 65 W | ||
Package Type D2PAK (TO-263) | ||
Mounting Type Surface Mount | ||
Channel Type N | ||
Pin Count 3 | ||
Switching Speed 1MHz | ||
Transistor Configuration Single | ||
Dimensions 10.4 x 9.35 x 4.6mm | ||
Minimum Operating Temperature -55 °C | ||
Maximum Operating Temperature +150 °C | ||
IGBT Discretes, STMicroelectronics
IGBT Discretes & Modules, STMicroelectronics
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
relaterade länkar
- STMicroelectronics STGB10NC60KDT4 IGBT 3-Pin D2PAK (TO-263), Surface Mount
- STMicroelectronics STGB10NC60HDT4 IGBT 3-Pin D2PAK (TO-263), Surface Mount
- STMicroelectronics STGB10NB37LZT4 IGBT 3-Pin D2PAK (TO-263), Surface Mount
- Infineon IGB10N60TATMA1 IGBT 3-Pin D2PAK (TO-263), Surface Mount
- Infineon IRGS15B60KPBF IGBT 3-Pin D2PAK (TO-263), Surface Mount
- STMicroelectronics STGB18N40LZT4 IGBT 3-Pin D2PAK (TO-263), Surface Mount
- STMicroelectronics STGB20N40LZ IGBT 3-Pin D2PAK (TO-263), Surface Mount
- STMicroelectronics STGB30H65DFB2 IGBT 3-Pin D2PAK (TO-263)