STMicroelectronics STGB20N40LZ IGBT, 25 A 425 V, 3-Pin D2PAK (TO-263), Surface Mount

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RS-artikelnummer:
165-6551
Tillv. art.nr:
STGB20N40LZ
Tillverkare / varumärke:
STMicroelectronics
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Brand

STMicroelectronics

Maximum Continuous Collector Current

25 A

Maximum Collector Emitter Voltage

425 V

Maximum Gate Emitter Voltage

16V

Maximum Power Dissipation

150 W

Package Type

D2PAK (TO-263)

Mounting Type

Surface Mount

Channel Type

N

Pin Count

3

Transistor Configuration

Single

Dimensions

10.4 x 9.35 x 4.6mm

Minimum Operating Temperature

-55 °C

Maximum Operating Temperature

+175 °C

COO (Country of Origin):
CN

IGBT Discretes, STMicroelectronics



IGBT Discretes & Modules, STMicroelectronics


The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

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