Infineon IRGS15B60KPBF IGBT, 31 A 600 V, 3-Pin D2PAK (TO-263), Surface Mount

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RS-artikelnummer:
145-9559
Tillv. art.nr:
IRGS15B60KPBF
Tillverkare / varumärke:
Infineon
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Brand

Infineon

Maximum Continuous Collector Current

31 A

Maximum Collector Emitter Voltage

600 V

Maximum Gate Emitter Voltage

±20V

Maximum Power Dissipation

208 W

Package Type

D2PAK (TO-263)

Mounting Type

Surface Mount

Channel Type

N

Pin Count

3

Switching Speed

1MHz

Transistor Configuration

Single

Dimensions

10.67 x 9.65 x 4.83mm

Gate Capacitance

850pF

Energy Rating

1070mJ

Maximum Operating Temperature

+150 °C

Minimum Operating Temperature

-55 °C

COO (Country of Origin):
MX

Single IGBT over 21A, Infineon


Optimised IGBTs designed for medium frequency applications with fast response and provide the user with the highest efficiency available. Utilising FRED diodes optimised to provide the best performance with IGBT's


IGBT Transistors, International Rectifier


International Rectifier offers an extensive IGBT (Insulated-Gate Bipolar Transistor) portfolio ranging from 300V to 1200V based on various technologies that minimize switching and conduction losses to increase efficiency, reduce thermal problems and improve power density. The company also offers a broad range of IGBT dies designed specifically for medium- to high-power modules. For modules that demand the highest reliability, solderable front metal (SFM) dies can be employed to eliminate bond wires and allow double-sided cooling for improved thermal performance, reliability and efficiency.

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