STMicroelectronics STGB10NC60HDT4 IGBT, 10 A 600 V, 3-Pin D2PAK (TO-263), Surface Mount

Mängdrabatt möjlig

Antal 25 enheter (levereras på en kontinuerlig remsa)*

555,50 kr

(exkl. moms)

694,50 kr

(inkl. moms)

Add to Basket
välj eller skriv kvantitet
I lager
  • 290 enhet(er) är redo att levereras
Behöver du mer? Ange den kvantitet du behöver och klicka på "Kontrollera leveransdatum"
Enheter
Per enhet
25 - 4522,22 kr
50 - 12020,026 kr
125 - 24517,964 kr
250 +17,092 kr

*vägledande pris

Förpackningsalternativ:
RS-artikelnummer:
795-7041P
Tillv. art.nr:
STGB10NC60HDT4
Tillverkare / varumärke:
STMicroelectronics
Hitta liknande produkter genom att välja ett eller flera attribut.
Välj alla

Brand

STMicroelectronics

Maximum Continuous Collector Current

10 A

Maximum Collector Emitter Voltage

600 V

Maximum Gate Emitter Voltage

±20V

Maximum Power Dissipation

65 W

Package Type

D2PAK (TO-263)

Mounting Type

Surface Mount

Channel Type

N

Pin Count

3

Switching Speed

1MHz

Transistor Configuration

Single

Dimensions

10.4 x 9.35 x 4.6mm

Minimum Operating Temperature

-55 °C

Maximum Operating Temperature

+150 °C

IGBT Discretes, STMicroelectronics



IGBT Discretes & Modules, STMicroelectronics


The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

relaterade länkar