Semikron Danfoss SKM400GAL12E4 Single IGBT Module, 618 A 1200 V, 5-Pin SEMITRANS3, Panel Mount
- RS-artikelnummer:
- 687-4989
- Tillv. art.nr:
- SKM400GAL12E4
- Tillverkare / varumärke:
- Semikron Danfoss
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- 12 enhet(er) levereras från den 08 april 2026
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Enheter | Per enhet |
|---|---|
| 1 - 9 | 3 006,08 kr |
| 10 - 19 | 2 858,80 kr |
| 20 - 49 | 2 714,43 kr |
| 50 - 249 | 2 579,25 kr |
| 250 + | 2 452,91 kr |
*vägledande pris
- RS-artikelnummer:
- 687-4989
- Tillv. art.nr:
- SKM400GAL12E4
- Tillverkare / varumärke:
- Semikron Danfoss
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Välj alla | Attribut | Värde |
|---|---|---|
| Brand | Semikron Danfoss | |
| Maximum Continuous Collector Current | 618 A | |
| Maximum Collector Emitter Voltage | 1200 V | |
| Maximum Gate Emitter Voltage | ±20V | |
| Configuration | Single | |
| Package Type | SEMITRANS3 | |
| Mounting Type | Panel Mount | |
| Channel Type | N | |
| Pin Count | 5 | |
| Transistor Configuration | Single | |
| Dimensions | 106.4 x 61.4 x 30.5mm | |
| Minimum Operating Temperature | -40 °C | |
| Maximum Operating Temperature | +175 °C | |
| Välj alla | ||
|---|---|---|
Brand Semikron Danfoss | ||
Maximum Continuous Collector Current 618 A | ||
Maximum Collector Emitter Voltage 1200 V | ||
Maximum Gate Emitter Voltage ±20V | ||
Configuration Single | ||
Package Type SEMITRANS3 | ||
Mounting Type Panel Mount | ||
Channel Type N | ||
Pin Count 5 | ||
Transistor Configuration Single | ||
Dimensions 106.4 x 61.4 x 30.5mm | ||
Minimum Operating Temperature -40 °C | ||
Maximum Operating Temperature +175 °C | ||
Single IGBT Modules
SEMIKRON offers IGBT (Insulated-Gate Bipolar Transistor) modules in SEMITRANS, SEMiX and SEMITOP packages in different topologies, current and voltage ratings.
IGBT Modules, Semikron
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
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