Infineon IKB06N60TATMA1 IGBT, 1899-12-31 06:00:00 600 V, 3-Pin TO-263, Through Hole
- RS-artikelnummer:
- 273-2966
- Tillv. art.nr:
- IKB06N60TATMA1
- Tillverkare / varumärke:
- Infineon
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(exkl. moms)
7 539,00 kr
(inkl. moms)
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Enheter | Per enhet | Per rulle* |
|---|---|---|
| 1000 + | 6,031 kr | 6 031,00 kr |
*vägledande pris
- RS-artikelnummer:
- 273-2966
- Tillv. art.nr:
- IKB06N60TATMA1
- Tillverkare / varumärke:
- Infineon
Specifikationer
Datablad
Lagstiftning och ursprungsland
Produktdetaljer
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Välj alla | Attribut | Värde |
|---|---|---|
| Brand | Infineon | |
| Maximum Continuous Collector Current | 1899-12-31 06:00:00 | |
| Maximum Collector Emitter Voltage | 600 V | |
| Maximum Gate Emitter Voltage | ±20V | |
| Maximum Power Dissipation | 88 W | |
| Number of Transistors | 1 | |
| Package Type | TO-263 | |
| Mounting Type | Through Hole | |
| Channel Type | N | |
| Pin Count | 3 | |
| Välj alla | ||
|---|---|---|
Brand Infineon | ||
Maximum Continuous Collector Current 1899-12-31 06:00:00 | ||
Maximum Collector Emitter Voltage 600 V | ||
Maximum Gate Emitter Voltage ±20V | ||
Maximum Power Dissipation 88 W | ||
Number of Transistors 1 | ||
Package Type TO-263 | ||
Mounting Type Through Hole | ||
Channel Type N | ||
Pin Count 3 | ||
The Infineon IGBT3 compacted with full-rated free-wheeling diode in a TO263 D2Pak package, leads to significant improvement of static as well as dynamic performance of the device, due to combination of trench-cell and fieldstop concept. The combination of
High ruggedness and temperature stable behaviour
Very tight parameter distribution
High device reliability
Very tight parameter distribution
High device reliability
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