Infineon IKB10N60TATMA1 Single Collector, Single Emitter, Single Gate IGBT, 30 A 600 V TO-263-3
- RS-artikelnummer:
- 258-7725
- Tillv. art.nr:
- IKB10N60TATMA1
- Tillverkare / varumärke:
- Infineon
Mängdrabatt möjlig
Antal (1 förpackning med 5 enheter)*
112,13 kr
(exkl. moms)
140,16 kr
(inkl. moms)
GRATIS leverans för online beställningar över 500,00 kr
I lager
- 955 enhet(er) är redo att levereras
Behöver du mer? Ange den kvantitet du behöver och klicka på "Kontrollera leveransdatum"
Enheter | Per enhet | Per förpackning* |
|---|---|---|
| 5 - 20 | 22,426 kr | 112,13 kr |
| 25 - 45 | 20,204 kr | 101,02 kr |
| 50 - 120 | 19,084 kr | 95,42 kr |
| 125 - 245 | 17,718 kr | 88,59 kr |
| 250 + | 16,374 kr | 81,87 kr |
*vägledande pris
- RS-artikelnummer:
- 258-7725
- Tillv. art.nr:
- IKB10N60TATMA1
- Tillverkare / varumärke:
- Infineon
Specifikationer
Datablad
Lagstiftning och ursprungsland
Produktdetaljer
Hitta liknande produkter genom att välja ett eller flera attribut.
Välj alla | Attribut | Värde |
|---|---|---|
| Brand | Infineon | |
| Maximum Continuous Collector Current | 30 A | |
| Maximum Collector Emitter Voltage | 600 V | |
| Maximum Gate Emitter Voltage | 20V | |
| Number of Transistors | 1 | |
| Maximum Power Dissipation | 110 W | |
| Configuration | Single Collector, Single Emitter, Single Gate | |
| Package Type | TO-263-3 | |
| Välj alla | ||
|---|---|---|
Brand Infineon | ||
Maximum Continuous Collector Current 30 A | ||
Maximum Collector Emitter Voltage 600 V | ||
Maximum Gate Emitter Voltage 20V | ||
Number of Transistors 1 | ||
Maximum Power Dissipation 110 W | ||
Configuration Single Collector, Single Emitter, Single Gate | ||
Package Type TO-263-3 | ||
The Infineon IGBT discrete with anti parallel diode in TO-263 package. It has significant improvement of static as well as dynamic performance of the device, due to combination of trench cell and field stop concept. It has low conduction and switching losses also.
Lowest VCEsat drop for lower conduction losses
Easy parallel switching capability due to positive temperature coefficient in VCEsat
Very soft, fast recovery antiparallel emitter controlled diode
High ruggedness, temperature stable behaviour
Low gate charg
Easy parallel switching capability due to positive temperature coefficient in VCEsat
Very soft, fast recovery antiparallel emitter controlled diode
High ruggedness, temperature stable behaviour
Low gate charg
relaterade länkar
- Infineon IKB10N60TATMA1 Single Collector Single Gate IGBT, 30 A 600 V TO-263-3
- Infineon FF600R12KE7EHPSA1 Single Collector Single Gate IGBT 3-Pin AG-62MMHB, Through
- ROHM RGCL80TS60DGC13 Single Collector Single Gate IGBT, 65 A 600 V TO-247GE
- ROHM RGCL60TS60DGC13 Single Collector Single Gate IGBT, 48 A 600 V TO-247GE
- ROHM RGCL80TS60GC13 Single Collector Single Gate IGBT, 65 A 600 V TO-247GE
- ROHM RGCL60TS60GC13 Single Collector Single Gate IGBT, 48 A 600 V TO-247GE
- Infineon FF600R12KE7BPSA1 Single Collector Single Gate IGBT 3-Pin AG-62MMHB, Through
- Infineon IKZA50N120CH7XKSA1 Single Collector Single Gate IGBT 4-Pin