Infineon IKP10N60TXKSA1 IGBT Transistor Module, 24 A 600 V PG-TO-220-3
- RS-artikelnummer:
- 259-1528
- Tillv. art.nr:
- IKP10N60TXKSA1
- Tillverkare / varumärke:
- Infineon
Mängdrabatt möjlig
Antal (1 rör med 50 enheter)*
598,15 kr
(exkl. moms)
747,70 kr
(inkl. moms)
GRATIS leverans för online beställningar över 500,00 kr
Tillfälligt slut
- Leverans från den 14 maj 2026
Behöver du mer? Ange den kvantitet du behöver och klicka på "Kontrollera leveransdatum"
Enheter | Per enhet | Per Rør* |
|---|---|---|
| 50 - 50 | 11,963 kr | 598,15 kr |
| 100 - 200 | 9,688 kr | 484,40 kr |
| 250 - 450 | 9,094 kr | 454,70 kr |
| 500 - 950 | 8,543 kr | 427,15 kr |
| 1000 + | 8,331 kr | 416,55 kr |
*vägledande pris
- RS-artikelnummer:
- 259-1528
- Tillv. art.nr:
- IKP10N60TXKSA1
- Tillverkare / varumärke:
- Infineon
Specifikationer
Datablad
Lagstiftning och ursprungsland
Produktdetaljer
Hitta liknande produkter genom att välja ett eller flera attribut.
Välj alla | Attribut | Värde |
|---|---|---|
| Brand | Infineon | |
| Maximum Continuous Collector Current | 24 A | |
| Maximum Collector Emitter Voltage | 600 V | |
| Maximum Gate Emitter Voltage | ±20V | |
| Maximum Power Dissipation | 110 W | |
| Number of Transistors | 3 | |
| Package Type | PG-TO-220-3 | |
| Välj alla | ||
|---|---|---|
Brand Infineon | ||
Maximum Continuous Collector Current 24 A | ||
Maximum Collector Emitter Voltage 600 V | ||
Maximum Gate Emitter Voltage ±20V | ||
Maximum Power Dissipation 110 W | ||
Number of Transistors 3 | ||
Package Type PG-TO-220-3 | ||
The Infineon trenchstop low loss duo pack and it is field stop technology with soft, fast recovery anti-parallel emitter controlled HE diode. It is Hard-switching 600 V, 10 A trenchstop IGBT3 co-packed with full-rated free-wheeling diode in a TO220 package, leads to significant improvement of static as well as dynamic performance of the device, due to combination of trench-cell and field stop concept.
Highest efficiency and low conduction and switching losses
Comprehensive portfolio in 600 V and 1200 V for flexibility of design
High device reliability
Low EMI emissions
Comprehensive portfolio in 600 V and 1200 V for flexibility of design
High device reliability
Low EMI emissions
relaterade länkar
- Infineon IKP10N60TXKSA1 IGBT Transistor Module, 24 A 600 V PG-TO-220-3
- Infineon IGP50N60TXKSA1 IGBT Transistor Module, 90 A 600 V PG-TO220-3
- Infineon IMBG120R350M1HXTMA1 IGBT Transistor Module PG-TO263-7
- Infineon IGW50N65F5FKSA1 IGBT Transistor Module, 80 A 650 V PG-TO247-3
- Infineon IKW50N65F5FKSA1 IGBT Transistor Module, 80 A 650 V PG-TO247-3
- Infineon IKP15N65H5XKSA1 IGBT Transistor Module, 30 A 650 V PG-TO220-3
- Infineon IKW50N65H5FKSA1 IGBT Transistor Module, 80 A 650 V PG-TO247-3
- Infineon IKW50N65RH5XKSA1 Single IGBT Transistor Module, 50 A 650 V PG-TO247-3