Infineon FS950R08A6P2BBPSA1 IGBT Module, 950 A 750 V HybridPACK
- RS-artikelnummer:
- 244-5877
- Tillv. art.nr:
- FS950R08A6P2BBPSA1
- Tillverkare / varumärke:
- Infineon
Antal (1 fack med 6 enheter)*
32 971,818 kr
(exkl. moms)
41 214,774 kr
(inkl. moms)
GRATIS leverans för online beställningar över 500,00 kr
I lager
- Dessutom levereras 6 enhet(er) från den 22 december 2025
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Enheter | Per enhet | Per Bricka* |
|---|---|---|
| 6 + | 5 495,303 kr | 32 971,82 kr |
*vägledande pris
- RS-artikelnummer:
- 244-5877
- Tillv. art.nr:
- FS950R08A6P2BBPSA1
- Tillverkare / varumärke:
- Infineon
Specifikationer
Datablad
Lagstiftning och ursprungsland
Produktdetaljer
Hitta liknande produkter genom att välja ett eller flera attribut.
Välj alla | Attribut | Värde |
|---|---|---|
| Brand | Infineon | |
| Maximum Continuous Collector Current | 950 A | |
| Maximum Collector Emitter Voltage | 750 V | |
| Maximum Gate Emitter Voltage | ±20V | |
| Number of Transistors | 6 | |
| Maximum Power Dissipation | 870 W | |
| Package Type | HybridPACK | |
| Välj alla | ||
|---|---|---|
Brand Infineon | ||
Maximum Continuous Collector Current 950 A | ||
Maximum Collector Emitter Voltage 750 V | ||
Maximum Gate Emitter Voltage ±20V | ||
Number of Transistors 6 | ||
Maximum Power Dissipation 870 W | ||
Package Type HybridPACK | ||
The infineon IGBT module drive is a very compact six-pack module (750 V/950 A) optimized for hybridand electric vehicles. The power module implements the new EDT2 IGBT generation, which is an automotive micro-pattern trench-field-stop cell design optimized for electric drive train applications. The chipset has benchmark current density combined with short circuit ruggedness and increased blocking voltage for reliable inverter operation under harsh environmental conditions. The EDT2 IGBTs also show excellent light load power losses, which helps to improve system efficiency over a real driving cycle. The EDT2 IGBT was optimized for applications with switching frequencies in the range of 10 kHz.
Electrical Features
Blocking voltage 750 V
Low VCEsat
Low switching losses
Low Qg and crss
Low inductive design Tvj op = 150° C
Short-time extended operation temperature Tvj op = 175°C
Mechanical features
4.2kV DC 1sec insulation
High creepage and clearance distances
Compact design
High power density
Direct cooled pinFin base plate
Guiding elements for PCB and cooler assembly
Integrated NTC temperature sensor
Pressfit contact technology
RoHS compliant
UL 94 V0 module frame
Blocking voltage 750 V
Low VCEsat
Low switching losses
Low Qg and crss
Low inductive design Tvj op = 150° C
Short-time extended operation temperature Tvj op = 175°C
Mechanical features
4.2kV DC 1sec insulation
High creepage and clearance distances
Compact design
High power density
Direct cooled pinFin base plate
Guiding elements for PCB and cooler assembly
Integrated NTC temperature sensor
Pressfit contact technology
RoHS compliant
UL 94 V0 module frame
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