Infineon IGP20N65H5XKSA1 Single IGBT, 42 A 650 V TO-220-3
- RS-artikelnummer:
- 242-0977
- Tillv. art.nr:
- IGP20N65H5XKSA1
- Tillverkare / varumärke:
- Infineon
Mängdrabatt möjlig
Antal (1 rör med 500 enheter)*
6 681,50 kr
(exkl. moms)
8 352,00 kr
(inkl. moms)
GRATIS leverans för online beställningar över 500,00 kr
Tillfälligt slut
- Leverans från den 08 juni 2026
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Enheter | Per enhet | Per Rør* |
|---|---|---|
| 500 - 500 | 13,363 kr | 6 681,50 kr |
| 1000 + | 12,695 kr | 6 347,50 kr |
*vägledande pris
- RS-artikelnummer:
- 242-0977
- Tillv. art.nr:
- IGP20N65H5XKSA1
- Tillverkare / varumärke:
- Infineon
Specifikationer
Datablad
Lagstiftning och ursprungsland
Produktdetaljer
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Välj alla | Attribut | Värde |
|---|---|---|
| Brand | Infineon | |
| Maximum Continuous Collector Current | 42 A | |
| Maximum Collector Emitter Voltage | 650 V | |
| Maximum Gate Emitter Voltage | 20V | |
| Maximum Power Dissipation | 125 W | |
| Number of Transistors | 1 | |
| Configuration | Single | |
| Package Type | TO-220-3 | |
| Välj alla | ||
|---|---|---|
Brand Infineon | ||
Maximum Continuous Collector Current 42 A | ||
Maximum Collector Emitter Voltage 650 V | ||
Maximum Gate Emitter Voltage 20V | ||
Maximum Power Dissipation 125 W | ||
Number of Transistors 1 | ||
Configuration Single | ||
Package Type TO-220-3 | ||
The Infineon IGBT trasistor has a 650 V breakthrough voltage.The maximum junction temperature of transistor is 175°C.
Best-in-Class efficiency in hard switching and resonant topologies
Plug and play replacement of previous generation IGBTs
Applicable in Solar converters , Uninterruptible power supplies, Welding converters
Mid to high range switching frequency converters
Plug and play replacement of previous generation IGBTs
Applicable in Solar converters , Uninterruptible power supplies, Welding converters
Mid to high range switching frequency converters
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