Infineon IKP15N65F5XKSA1 IGBT, 30 A 650 V, 3-Pin TO-220, Through Hole

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1 130,75 kr

(exkl. moms)

1 413,45 kr

(inkl. moms)

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50 - 5022,615 kr1 130,75 kr
100 - 20021,484 kr1 074,20 kr
250 +20,129 kr1 006,45 kr

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RS-artikelnummer:
145-9180
Tillv. art.nr:
IKP15N65F5XKSA1
Tillverkare / varumärke:
Infineon
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Brand

Infineon

Maximum Continuous Collector Current

30 A

Maximum Collector Emitter Voltage

650 V

Maximum Gate Emitter Voltage

±20V

Maximum Power Dissipation

105 W

Package Type

TO-220

Mounting Type

Through Hole

Channel Type

N

Pin Count

3

Transistor Configuration

Single

Dimensions

10.36 x 4.57 x 15.95mm

Maximum Operating Temperature

+175 °C

Energy Rating

0.17mJ

Minimum Operating Temperature

-40 °C

Gate Capacitance

930pF

COO (Country of Origin):
MY

Infineon TrenchStop IGBT Transistors, 600 and 650V


A range of IGBT Transistors from Infineon with collector-emitter voltage ratings of 600 and 650V featuring TrenchStop™ technology. The range includes devices with an integrated high speed, fast recovery anti-parallel diode.

• Collector-emitter voltage range 600 to 650V
• Very low VCEsat
• Low turn-off losses
• Short tail current
• Low EMI
• Maximum junction temperature 175°C


IGBT Discretes & Modules, Infineon


The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

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