Infineon IKP08N65H5XKSA1, Type N-Channel IGBT, 18 A 650 V, 3-Pin TO-220, Through Hole
- RS-artikelnummer:
- 273-2971
- Tillv. art.nr:
- IKP08N65H5XKSA1
- Tillverkare / varumärke:
- Infineon
Mängdrabatt möjlig
Antal (1 rör med 50 enheter)*
715,25 kr
(exkl. moms)
894,05 kr
(inkl. moms)
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- 450 enhet(er) är redo att levereras
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Enheter | Per enhet | Per Rør* |
|---|---|---|
| 50 - 50 | 14,305 kr | 715,25 kr |
| 100 + | 11,444 kr | 572,20 kr |
*vägledande pris
- RS-artikelnummer:
- 273-2971
- Tillv. art.nr:
- IKP08N65H5XKSA1
- Tillverkare / varumärke:
- Infineon
Specifikationer
Datablad
Lagstiftning och ursprungsland
Produktdetaljer
Hitta liknande produkter genom att välja ett eller flera attribut.
Välj alla | Attribut | Värde |
|---|---|---|
| Brand | Infineon | |
| Maximum Continuous Collector Current Ic | 18A | |
| Product Type | IGBT | |
| Maximum Collector Emitter Voltage Vceo | 650V | |
| Maximum Power Dissipation Pd | 70W | |
| Package Type | TO-220 | |
| Mount Type | Through Hole | |
| Channel Type | Type N | |
| Pin Count | 3 | |
| Minimum Operating Temperature | -40°C | |
| Maximum Collector Emitter Saturation Voltage VceSAT | 2.1V | |
| Maximum Operating Temperature | 175°C | |
| Width | 10.38 mm | |
| Series | TrenchStop | |
| Standards/Approvals | JEDEC, RoHS | |
| Height | 4.57mm | |
| Length | 15.95mm | |
| Automotive Standard | No | |
| Välj alla | ||
|---|---|---|
Brand Infineon | ||
Maximum Continuous Collector Current Ic 18A | ||
Product Type IGBT | ||
Maximum Collector Emitter Voltage Vceo 650V | ||
Maximum Power Dissipation Pd 70W | ||
Package Type TO-220 | ||
Mount Type Through Hole | ||
Channel Type Type N | ||
Pin Count 3 | ||
Minimum Operating Temperature -40°C | ||
Maximum Collector Emitter Saturation Voltage VceSAT 2.1V | ||
Maximum Operating Temperature 175°C | ||
Width 10.38 mm | ||
Series TrenchStop | ||
Standards/Approvals JEDEC, RoHS | ||
Height 4.57mm | ||
Length 15.95mm | ||
Automotive Standard No | ||
The Infineon IGBT in a TO-220 package compacted with fast and soft RAPID 1 anti parallel diode.
650 V breakthrough voltage
Mild positive temperature coefficient
Higher power density design
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