STMicroelectronics STGWT20H65FB IGBT, 40 A 650 V, 3-Pin TO, Through Hole

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63,39 kr

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79,238 kr

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2 - 831,695 kr63,39 kr
10 - 1830,63 kr61,26 kr
20 - 4829,85 kr59,70 kr
50 - 9829,12 kr58,24 kr
100 +28,335 kr56,67 kr

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Förpackningsalternativ:
RS-artikelnummer:
192-4809
Tillv. art.nr:
STGWT20H65FB
Tillverkare / varumärke:
STMicroelectronics
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Brand

STMicroelectronics

Maximum Continuous Collector Current

40 A

Maximum Collector Emitter Voltage

650 V

Maximum Gate Emitter Voltage

±20V

Maximum Power Dissipation

168 W

Number of Transistors

1

Package Type

TO

Mounting Type

Through Hole

Channel Type

N

Pin Count

3

Transistor Configuration

Single

Dimensions

15.8 x 5 x 20.1mm

Minimum Operating Temperature

-55 °C

Maximum Operating Temperature

+175 °C

COO (Country of Origin):
KR
These devices are IGBTs developed using an advanced proprietary trench gate and field-stop structure. The device is part of the new HB series of IGBTs, which represent an optimum compromise between conduction and switching losses to maximize the efficiency of any frequency converter. Furthermore, a slightly positive VCE(sat)temperature coefficient and very tight parameter distribution result in safer paralleling operation.

Maximum junction temperature: TJ= 175 °C
High speed switching series
Minimized tail current
VCE(sat)= 1.55 V (typ.) @ IC= 20 A
Tight parameters distribution
Safe paralleling
Low thermal resistance
Lead free package

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