STMicroelectronics STGW60H65DFB IGBT, 80 A 650 V, 3-Pin TO-247, Through Hole

Se alla IGBTs
Mängdrabatt möjlig

Antal (1 rör med 30 enheter)*

1 066,47 kr

(exkl. moms)

1 333,08 kr

(inkl. moms)

Add to Basket
välj eller skriv kvantitet
Tillfälligt slut
  • 600 enhet(er) levereras från den 01 april 2026
Behöver du mer? Ange den kvantitet du behöver och klicka på "Kontrollera leveransdatum"
Enheter
Per enhet
Per Rør*
30 - 3035,549 kr1 066,47 kr
60 - 12034,623 kr1 038,69 kr
150 +33,772 kr1 013,16 kr

*vägledande pris

RS-artikelnummer:
168-7096
Tillv. art.nr:
STGW60H65DFB
Tillverkare / varumärke:
STMicroelectronics
Hitta liknande produkter genom att välja ett eller flera attribut.
Välj alla

Brand

STMicroelectronics

Maximum Continuous Collector Current

80 A

Maximum Collector Emitter Voltage

650 V

Maximum Gate Emitter Voltage

±20V

Maximum Power Dissipation

375 W

Package Type

TO-247

Mounting Type

Through Hole

Channel Type

N

Pin Count

3

Transistor Configuration

Single

Dimensions

15.75 x 5.15 x 20.15mm

Minimum Operating Temperature

-55 °C

Maximum Operating Temperature

+175 °C

COO (Country of Origin):
CN

IGBT Discretes, STMicroelectronics



IGBT Discretes & Modules, STMicroelectronics


The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

relaterade länkar