STMicroelectronics STGWT80H65DFB IGBT, 120 A 650 V, 3-Pin TO-3P, Through Hole

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1 608,99 kr

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2 011,23 kr

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30 - 3053,633 kr1 608,99 kr
60 - 12045,64 kr1 369,20 kr
150 +44,516 kr1 335,48 kr

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RS-artikelnummer:
168-8740
Tillv. art.nr:
STGWT80H65DFB
Tillverkare / varumärke:
STMicroelectronics
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Brand

STMicroelectronics

Maximum Continuous Collector Current

120 A

Maximum Collector Emitter Voltage

650 V

Maximum Gate Emitter Voltage

±20V

Maximum Power Dissipation

469 W

Package Type

TO-3P

Mounting Type

Through Hole

Channel Type

N

Pin Count

3

Switching Speed

1MHz

Transistor Configuration

Single

Dimensions

15.8 x 5 x 20.1mm

Maximum Operating Temperature

+175 °C

Minimum Operating Temperature

-55 °C

COO (Country of Origin):
KR

IGBT Discretes, STMicroelectronics



IGBT Discretes & Modules, STMicroelectronics


The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

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