onsemi NGTB40N65FL2WG IGBT, 80 A 650 V, 3-Pin TO-247, Through Hole
- RS-artikelnummer:
- 145-3469
- Tillv. art.nr:
- NGTB40N65FL2WG
- Tillverkare / varumärke:
- onsemi
Mängdrabatt möjlig
Antal (1 rör med 30 enheter)*
1 324,74 kr
(exkl. moms)
1 655,94 kr
(inkl. moms)
GRATIS leverans för online beställningar över 500,00 kr
Tillfälligt slut
- Leverans från den 17 mars 2026
Behöver du mer? Ange den kvantitet du behöver och klicka på "Kontrollera leveransdatum"
Enheter | Per enhet | Per Rør* |
|---|---|---|
| 30 - 90 | 44,158 kr | 1 324,74 kr |
| 120 - 240 | 35,422 kr | 1 062,66 kr |
| 270 - 480 | 33,466 kr | 1 003,98 kr |
| 510 + | 31,401 kr | 942,03 kr |
*vägledande pris
- RS-artikelnummer:
- 145-3469
- Tillv. art.nr:
- NGTB40N65FL2WG
- Tillverkare / varumärke:
- onsemi
Specifikationer
Datablad
Lagstiftning och ursprungsland
Produktdetaljer
Hitta liknande produkter genom att välja ett eller flera attribut.
Välj alla | Attribut | Värde |
|---|---|---|
| Brand | onsemi | |
| Maximum Continuous Collector Current | 80 A | |
| Maximum Collector Emitter Voltage | 650 V | |
| Maximum Gate Emitter Voltage | ±20V | |
| Maximum Power Dissipation | 366 W | |
| Package Type | TO-247 | |
| Mounting Type | Through Hole | |
| Channel Type | N | |
| Pin Count | 3 | |
| Switching Speed | 1MHz | |
| Transistor Configuration | Single | |
| Dimensions | 16.26 x 5.3 x 21.08mm | |
| Minimum Operating Temperature | -55 °C | |
| Maximum Operating Temperature | +175 °C | |
| Välj alla | ||
|---|---|---|
Brand onsemi | ||
Maximum Continuous Collector Current 80 A | ||
Maximum Collector Emitter Voltage 650 V | ||
Maximum Gate Emitter Voltage ±20V | ||
Maximum Power Dissipation 366 W | ||
Package Type TO-247 | ||
Mounting Type Through Hole | ||
Channel Type N | ||
Pin Count 3 | ||
Switching Speed 1MHz | ||
Transistor Configuration Single | ||
Dimensions 16.26 x 5.3 x 21.08mm | ||
Minimum Operating Temperature -55 °C | ||
Maximum Operating Temperature +175 °C | ||
- COO (Country of Origin):
- CN
IGBT Discretes, ON Semiconductor
Insulated Gate Bipolar Transistors (IGBT) for motor drive and other high current switching applications.
IGBT Discretes, ON Semiconductor
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
relaterade länkar
- onsemi NGTB40N65FL2WG IGBT 3-Pin TO-247, Through Hole
- onsemi FGHL75T65LQDT IGBT, 80 A 650 V TO-247-3L
- onsemi AFGHL40T65SQD IGBT 3-Pin TO-247
- onsemi AFGHL40T65SPD IGBT 3-Pin TO-247, Through Hole
- onsemi FGHL50T65MQDT IGBT, 80 A 650 V TO-247-3L
- onsemi FGHL75T65MQDT IGBT, 80 A 650 V TO-247-3L
- onsemi FGH4L50T65SQD IGBT, 80 A 650 V TO-247-4LD
- onsemi FGHL75T65MQDTL4 IGBT, 80 A 650 V TO-247-4LD