onsemi NGTB25N120FL3WG IGBT, 100 A 1200 V, 3-Pin TO-247, Through Hole

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Antal (1 rör med 30 enheter)*

1 399,56 kr

(exkl. moms)

1 749,45 kr

(inkl. moms)

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  • 30 enhet(er) levereras från den 25 mars 2026
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30 - 9046,652 kr1 399,56 kr
120 - 24037,318 kr1 119,54 kr
270 - 48035,265 kr1 057,95 kr
510 - 99033,839 kr1 015,17 kr
1020 +32,991 kr989,73 kr

*vägledande pris

RS-artikelnummer:
145-3284
Tillv. art.nr:
NGTB25N120FL3WG
Tillverkare / varumärke:
onsemi
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Brand

onsemi

Maximum Continuous Collector Current

100 A

Maximum Collector Emitter Voltage

1200 V

Maximum Gate Emitter Voltage

±20V

Maximum Power Dissipation

349 W

Package Type

TO-247

Mounting Type

Through Hole

Channel Type

N

Pin Count

3

Switching Speed

1MHz

Transistor Configuration

Single

Dimensions

16.25 x 5.3 x 21.4mm

Minimum Operating Temperature

-55 °C

Maximum Operating Temperature

+175 °C

Gate Capacitance

3085pF

COO (Country of Origin):
CN

IGBT Discretes, ON Semiconductor


Insulated Gate Bipolar Transistors (IGBT) for motor drive and other high current switching applications.


IGBT Discretes, ON Semiconductor


The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

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