onsemi FGH4L40T120LQD IGBT, 80 A 1200 V TO-247

The ON Semiconductor 1200 V, 40 A ultra field stop IGBT. This IGBT uses a fast switching co-packed diode making it ideal for use in hard-switching applications where EON, IRRM and trr are important factors determining the losses. Ultra Field Stop IGBTs offers excellent switching losses for low conduction loss devices.

Low VCE(SAT) 1.55V at 40A
EON 1.04mJ at 600V/40A
EOFF 1.35mJ at 600V/40A
IRRM 41.3A at 175C 1A/ns 40A