Renesas Electronics RJH60F5DPQ-A0#T0 IGBT, 80 A 600 V, 3-Pin TO-247A, Through Hole

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Förpackningsalternativ:
RS-artikelnummer:
124-3702P
Tillv. art.nr:
RJH60F5DPQ-A0#T0
Tillverkare / varumärke:
Renesas Electronics
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Brand

Renesas Electronics

Maximum Continuous Collector Current

80 A

Maximum Collector Emitter Voltage

600 V

Maximum Gate Emitter Voltage

±30V

Maximum Power Dissipation

260.4 W

Package Type

TO-247A

Mounting Type

Through Hole

Channel Type

N

Pin Count

3

Switching Speed

1MHz

Transistor Configuration

Single

Dimensions

15.94 x 5.02 x 21.13mm

Maximum Operating Temperature

+150 °C

Gate Capacitance

2780pF

COO (Country of Origin):
JP

IGBT Discretes, Renesas Electronics



IGBT Discretes & Modules


The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

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