Infineon IKW40N60H3FKSA1 IGBT, 80 A 600 V, 3-Pin TO-247, Through Hole

Se alla IGBTs
Mängdrabatt möjlig

Antal (1 rör med 30 enheter)*

943,41 kr

(exkl. moms)

1 179,27 kr

(inkl. moms)

Add to Basket
välj eller skriv kvantitet
I lager
  • 30 enhet(er) är redo att levereras
Behöver du mer? Ange den kvantitet du behöver och klicka på "Kontrollera leveransdatum"
Enheter
Per enhet
Per Rør*
30 - 3031,447 kr943,41 kr
60 - 12029,878 kr896,34 kr
150 +28,62 kr858,60 kr

*vägledande pris

RS-artikelnummer:
145-8726
Tillv. art.nr:
IKW40N60H3FKSA1
Tillverkare / varumärke:
Infineon
Hitta liknande produkter genom att välja ett eller flera attribut.
Välj alla

Brand

Infineon

Maximum Continuous Collector Current

80 A

Maximum Collector Emitter Voltage

600 V

Maximum Gate Emitter Voltage

±20V

Maximum Power Dissipation

306 W

Package Type

TO-247

Mounting Type

Through Hole

Channel Type

N

Pin Count

3

Transistor Configuration

Single

Dimensions

16.13 x 5.21 x 21.1mm

Energy Rating

2.12mJ

Maximum Operating Temperature

+175 °C

Minimum Operating Temperature

-40 °C

Gate Capacitance

2190pF

COO (Country of Origin):
CN

Infineon TrenchStop IGBT Transistors, 600 and 650V


A range of IGBT Transistors from Infineon with collector-emitter voltage ratings of 600 and 650V featuring TrenchStop™ technology. The range includes devices with an integrated high speed, fast recovery anti-parallel diode.

• Collector-emitter voltage range 600 to 650V
• Very low VCEsat
• Low turn-off losses
• Short tail current
• Low EMI
• Maximum junction temperature 175°C


IGBT Discretes & Modules, Infineon


The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

relaterade länkar