Renesas Electronics RJH60D3DPP-M0#T2 IGBT, 35 A 600 V, 3-Pin TO-220FL, Through Hole

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RS-artikelnummer:
124-3700
Tillv. art.nr:
RJH60D3DPP-M0#T2
Tillverkare / varumärke:
Renesas Electronics
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Brand

Renesas Electronics

Maximum Continuous Collector Current

35 A

Maximum Collector Emitter Voltage

600 V

Maximum Gate Emitter Voltage

±30V

Maximum Power Dissipation

40 W

Package Type

TO-220FL

Mounting Type

Through Hole

Channel Type

N

Pin Count

3

Switching Speed

1MHz

Transistor Configuration

Single

Dimensions

10 x 4.5 x 15mm

Maximum Operating Temperature

+150 °C

Gate Capacitance

900pF

COO (Country of Origin):
JP

IGBT Discretes, Renesas Electronics



IGBT Discretes & Modules


The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

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