STMicroelectronics STGWA50M65DF2AG Single IGBT, 119 A 650 V, 3-Pin TO-247, Through Hole

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Förpackningsalternativ:
RS-artikelnummer:
215-009
Tillv. art.nr:
STGWA50M65DF2AG
Tillverkare / varumärke:
STMicroelectronics
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Brand

STMicroelectronics

Maximum Continuous Collector Current

119 A

Maximum Collector Emitter Voltage

650 V

Maximum Gate Emitter Voltage

±20V

Maximum Power Dissipation

576 W

Number of Transistors

1

Configuration

Single

Package Type

TO-247

Mounting Type

Through Hole

Channel Type

N

Pin Count

3

COO (Country of Origin):
CN
The STMicroelectronics IGBT developed using an advanced proprietary trench gate fieldstop structure. The device is part of the M series IGBTs, which represent an optimal balance between inverter system performance and efficiency where the low-loss and the short-circuit functionality is essential. Furthermore, the positive VCE(sat) temperature coefficient and the tight parameter distribution result in safer paralleling operation.

Minimized tail current
Tight parameter distribution
Safer paralleling

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