Infineon, IGBT, Typ N Kanal, 40 A 600 V 100 kHz, 3 Ben, TO-247 Genomgående hål

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118,832 kr

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148,54 kr

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4 - 3629,708 kr118,83 kr
40 - 7624,053 kr96,21 kr
80 - 19622,905 kr91,62 kr
200 - 59620,86 kr83,44 kr
600 +18,20 kr72,80 kr

*vägledande pris

Förpackningsalternativ:
RS-artikelnummer:
892-2197
Tillv. art.nr:
IKW20N60H3FKSA1
Tillverkare / varumärke:
Infineon
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Varumärke

Infineon

Produkttyp

IGBT

Maximal kontinuerlig kollektorström Ic

40A

Maximal kollektor-emitterspänning Vceo

600V

Maximal effektförlust Pd

170W

Kapseltyp

TO-247

Fästetyp

Genomgående hål

Kanaltyp

Typ N

Antal ben

3

Switchhastighet

100kHz

Minsta arbetsstemperatur

-40°C

Maximal spänning för gate-emitter VGEO

±20 V

Maximal mättnadsspänning för kollektorns emitter VceSAT

2.5V

Maximal arbetstemperatur

175°C

Serie

TrenchStop

Standarder/godkännanden

RoHS, JEDEC

Energimärkning

1.07mJ

Fordonsstandard

Nej

Infineon IGBT, 40A Maximum Continuous Collector Current, 600V Maximum Collector Emitter Voltage - IKW20N60H3FKSA1


This IGBT module is designed for high-speed switching applications within the power electronics sector. The device conforms to TO-247 IGBT package specifications and measures 16.13 x 5.21 x 21.1 mm. With a maximum collector-emitter voltage of 600V and a continuous collector current of 40A, it proves effective for various demanding applications in the electrical and mechanical sectors.

Features & Benefits


• Utilises TRENCHSTOP technology, delivering low VCEsat

• Achieves maximum junction temperature of 175°C for robust performance

• Features a soft, fast recovery anti-parallel diode enhancing reliability

• Ensures a switching speed of 100kHz for efficient operation

Applications


• Utilised in uninterruptible power supplies for reliable operation

• Effective in welding converters for high-performance welding

• Suitable for converters with high switching frequency requirements

What are the thermal resistance characteristics of this module?


The thermal resistance from junction to case is 0.88 K/W, while the diode thermal resistance from junction to case is 1.89 K/W, ensuring effective heat dissipation in demanding environments.

How does the IGBT handle short circuits and power dissipation?


It supports a pulsed collector current of up to 80A and a power dissipation capacity of 170W, allowing for robust performance under short circuit conditions. The device can handle up to 1000 short circuits with a safe operating time of 5μs.

What is the significance of gate capacitance in this IGBT?


The gate capacitance of 1100pF contributes to the efficient control of the gate-emitter voltage, leading to optimised switching characteristics and reducing energy losses during operation.

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