Infineon 2ED2109S06FXUMA1 MOSFET Gate Driver 2, 290 mA 8-Pin 25 V, DSO

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97,36 kr

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121,70 kr

(inkl. moms)

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50 - 909,251 kr92,51 kr
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250 - 4908,456 kr84,56 kr
500 +7,874 kr78,74 kr

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Förpackningsalternativ:
RS-artikelnummer:
226-6023
Tillv. art.nr:
2ED2109S06FXUMA1
Tillverkare / varumärke:
Infineon
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Brand

Infineon

Product Type

High Speed Power MOSFET & IGBT Driver

Output Current

290mA

Pin Count

8

Package Type

DSO

Fall Time

80ns

Number of Outputs

2

Driver Type

MOSFET

Rise Time

150ns

Minimum Supply Voltage

20V

Maximum Supply Voltage

25V

Number of Drivers

2

Minimum Operating Temperature

-40°C

Maximum Operating Temperature

125°C

Standards/Approvals

JEDEC47/20/22

Length

4.9mm

Series

2ED2109 (4) S06F (J)

Width

3.9 mm

Height

1.72mm

Mount Type

Surface

Automotive Standard

No

The Infineon 2ED2109S06F is a high voltage, high speed power MOSFET and IGBT driver with independent high and low side referenced output channels. It is based on SOI-technology there is an excellent ruggedness and noise immunity with capability to maintain operational logic at negative voltages of up to - 11 Von VS pin on transient voltage. The output drivers feature a high pulse current buffer stage designed for minimum driver cross-conduction.

Floating channel designed for bootstrap operation

Operating voltages (VS node) upto + 650 V

Maximum bootstrap voltage (VB node) of + 675 V

Integrated ultra-fast, low resistance bootstrap diode

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