onsemi MOSFET, MOSFET, 6.5 A, 8 Ben 22 V, SOIC

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RS-artikelnummer:
244-9172
Tillv. art.nr:
NCV57091CDWR2G
Tillverkare / varumärke:
onsemi
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Varumärke

onsemi

Produkttyp

MOSFET

Utström

6.5A

Antal ben

8

Falltid

13ns

Kapseltyp

SOIC

Typ av drivsteg

MOSFET

Stigtid

30ns

Minsta matningsspänning

22V

Maximal matningsspänning

22V

Minsta arbetsstemperatur

-40°C

Maximal arbetstemperatur

150°C

Standarder/godkännanden

No

Serie

NCV57

Fästetyp

Kretskort

Fordonsstandard

Nej

The ON Semiconductor Gate Driver are isolated dual−channel gate drivers with 4.5−A/9−A source and sink peak current respectively. They are designed for fast switching to drive power MOSFETs, and SiC MOSFET power switches. The NCP51561 offers short and matched propagation delays. Two independent and 5 kVrms internal galvanic isolation from input to each output and internal functional isolation between the two output drivers allows a working voltage of up to 1500 VDC. This driver can be used in any possible configurations of two low side, two high−side switches or a half−bridge driver with programmable dead time. An ENA/DIS pin shutdowns both outputs simultaneously when set low or high for ENABLE or DISABLE mode respectively. The NCP51561 offers other important protection functions such as independent under−voltage lockout for both gate drivers and a Dead Time adjustment function.

4.5 A Peak Source, 9 A Peak Sink Output Current Capability

Flexible: Dual Low−Side, Dual High−Side or Half−Bridge Gate Driver

Independent UVLO Protections for Both Output Drivers

Output Supply Voltage from 6.5 V to 30 V with 5−V and 8−V for MOSFET, 13−V and 17−V UVLO for SiC, Thresholds.

Common Mode Transient Immunity CMTI > 200 V/ns

Propagation Delay Typical 36 ns with 5 ns Max Delay Matching per Channel and 5 ns Max Pulse−Width Distortion

User Programmable Input Logic Single or Dual−Input Modes via ANB and ENABLE or DISABLE Mode

User Programmable Dead−Time

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