Infineon MOSFET, MOSFET, 2 A, 11 Ben 11 V, PG-VSON-10

Se alla Gate-drivare
Mängdrabatt möjlig

Antal (1 förpackning med 5 enheter)*

36,85 kr

(exkl. moms)

46,05 kr

(inkl. moms)

Add to Basket
välj eller skriv kvantitet
I lager
  • Dessutom levereras 3 780 enhet(er) från den 28 april 2026
Behöver du mer? Ange den kvantitet du behöver och klicka på "Kontrollera leveransdatum"

Enheter
Per enhet
Per förpackning*
5 - 457,37 kr36,85 kr
50 - 1206,406 kr32,03 kr
125 - 2456,048 kr30,24 kr
250 - 4955,60 kr28,00 kr
500 +5,152 kr25,76 kr

*vägledande pris

Förpackningsalternativ:
RS-artikelnummer:
240-8518
Tillv. art.nr:
1EDN7116GXTMA1
Tillverkare / varumärke:
Infineon
Hitta liknande produkter genom att välja ett eller flera attribut.
Välj alla

Varumärke

Infineon

Produkttyp

MOSFET

Utström

2A

Antal ben

11

Falltid

3ns

Kapseltyp

PG-VSON-10

Typ av drivsteg

MOSFET

Minsta matningsspänning

11V

Maximal matningsspänning

11V

Minsta arbetsstemperatur

-40°C

Maximal arbetstemperatur

125°C

Standarder/godkännanden

No

Fordonsstandard

Nej

The Infineon EiceDRIVER™ 1EDN7116G is a single-channel gate-driver IC optimized for compatibility with CoolGaN™ HEMTs, and it is also compatible with other Schottky Gate (SG) GaN HEMTs and Silicon MOSFETs, Thanks to the truly differential input (TDI) feature, the gate driver output state is exclusively controlled by the voltage difference between the two inputs, completely independent of the driver’s reference (ground) potential as long as the common-mode voltage is below 150 V (static) and 200 V (dynamic). This eliminates the risk of false triggering due to ground bounce in low-side applications, while also allowing 1EDN7116G to address even high-side applications.

Avoid false triggering in low-side or high-side operation

High common-mode input voltage range for high side operation

Robust operation during fast switching transients

Compatible with 3.3 V or 5 V input logic

Active Miller clamp with 5 A sink capability to avoid induced turn-on

Adjustable charge pump for negative turn-off supply voltage

Suitable for driving GaN HEMTs or Si MOSFETs

Qualified according to JEDEC for target applications

Relaterade länkar