Winbond SLC NAND 1 GB Parallel Flash Memory 63-Pin VFBGA

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7 180,53 kr

(exkl. moms)

8 975,61 kr

(inkl. moms)

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210 +34,193 kr7 180,53 kr

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RS-artikelnummer:
188-2554
Tillv. art.nr:
W29N01HZBINA
Tillverkare / varumärke:
Winbond
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Brand

Winbond

Product Type

Flash Memory

Memory Size

1GB

Interface Type

Parallel

Package Type

VFBGA

Pin Count

63

Organisation

128M x 8 Bit

Mount Type

Surface

Cell Type

SLC NAND

Maximum Supply Voltage

1.95V

Minimum Supply Voltage

1.7V

Minimum Operating Temperature

-40°C

Maximum Operating Temperature

85°C

Width

11.1 mm

Height

0.6mm

Length

11.1mm

Standards/Approvals

No

Automotive Standard

No

Number of Words

128M

Series

W29N01HZ

Supply Current

25mA

Maximum Random Access Time

25μs

Number of Bits per Word

8

Density : 1Gbit (Single chip solution)

Vcc : 1.7V to 1.95V

Bus width : x8 x16

Operating temperature

Industrial: -40°C to 85°C

Single-Level Cell (SLC) technology.

Organization

Density: 1G-bit/128M-byte

Page size

2,112 bytes (2048 + 64 bytes)

1,056 words (1024 + 32 words)

Block size

64 pages (128K + 4K bytes)

64 pages (64K + 2K words)

Highest Performance

Read performance (Max.)

Random read: 25us

Sequential read cycle: 25ns

Write Erase performance

Page program time: 250us(typ.)

Block erase time: 2ms(typ.)

Endurance 100,000 Erase/Program Cycles(1)

10-years data retention

Command set

Standard NAND command s

Additional command support

Copy Back

Lowest power consumption

Read: 13 mA(typ.)

Program/Erase:10mA(typ)

CMOS standby: 10uA(typ.)

Space Efficient Packaging

48-pin standard TSOP1

48-ball VFBGA

63-ball VFBGA

68-ball WLCSP

1Gb SLC NAND Flash Memory with uniform 2KB+64B page size.

Bus Width: x8

Random Read: 25us

Page Program Time: 250us(typ.)

Block Erase Time: 2ms(typ.)

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