Infineon SRAM Memory Chip, CY7C1061GE30-10ZSXI- 16Mbit

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36 823,464 kr

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46 029,384 kr

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RS-artikelnummer:
181-7451
Tillv. art.nr:
CY7C1061GE30-10ZSXI
Tillverkare / varumärke:
Infineon
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Brand

Infineon

Memory Size

16Mbit

Organisation

1M x 16 bit

Number of Words

1M

Number of Bits per Word

16bit

Maximum Random Access Time

10ns

Address Bus Width

16bit

Clock Frequency

100MHz

Low Power

Yes

Timing Type

Asynchronous

Mounting Type

Surface Mount

Package Type

TSOP

Pin Count

54

Dimensions

22.51 x 10.26 x 1.05mm

Maximum Operating Supply Voltage

3.6 V

Height

1.05mm

Minimum Operating Temperature

-40 °C

Width

10.26mm

Minimum Operating Supply Voltage

2.2 V

Length

22.51mm

Maximum Operating Temperature

+85 °C

CY7C1061G and CY7C1061GE are high-performance CMOS fast static RAM devices with embedded ECC. Both devices are offered in single and dual chip enable options and in multiple pin configurations. The CY7C1061GE device includes an ERR pin that signals a single-bit error-detection and correction event during a read cycle.

High speed
tAA = 10 ns/15 ns
Embedded error-correcting code (ECC) for single-bit error
correction[1, 2]
Low active and standby currents
ICC = 90 mA typical at 100 MHz
ISB2 = 20 mA typical
Operating voltage range: 1.65 V to 2.2 V, 2.2 V to 3.6 V, and
4.5 V to 5.5 V
1.0 V data retention
Transistor-transistor logic (TTL) compatible inputs and outputs
Error indication (ERR) pin to indicate 1-bit error detection and correction
Available in Pb-free 48-pin TSOP I, 54-pin TSOP II, and 48-ball VFBGA packages

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