Renesas Electronics SRAM, RMLV0408EGSB-4S2#AA1- 4Mbit
- RS-artikelnummer:
- 126-6976
- Tillv. art.nr:
- RMLV0408EGSB-4S2#AA1
- Tillverkare / varumärke:
- Renesas Electronics
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RS kommer inte längre att lagerföra denna produkt.
- RS-artikelnummer:
- 126-6976
- Tillv. art.nr:
- RMLV0408EGSB-4S2#AA1
- Tillverkare / varumärke:
- Renesas Electronics
Specifikationer
Datablad
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Välj alla | Attribut | Värde |
|---|---|---|
| Brand | Renesas Electronics | |
| Memory Size | 4Mbit | |
| Organisation | 512K words x 8 bit | |
| Number of Words | 512K | |
| Number of Bits per Word | 8bit | |
| Maximum Random Access Time | 45ns | |
| Address Bus Width | 19bit | |
| Low Power | Yes | |
| Mounting Type | Surface Mount | |
| Package Type | TSOP | |
| Pin Count | 32 | |
| Dimensions | 11.9 x 8.1 x 1mm | |
| Maximum Operating Supply Voltage | 3.6 V | |
| Height | 1mm | |
| Width | 8.1mm | |
| Minimum Operating Temperature | -40 °C | |
| Maximum Operating Temperature | +85 °C | |
| Length | 11.9mm | |
| Minimum Operating Supply Voltage | 2.7 V | |
| Välj alla | ||
|---|---|---|
Brand Renesas Electronics | ||
Memory Size 4Mbit | ||
Organisation 512K words x 8 bit | ||
Number of Words 512K | ||
Number of Bits per Word 8bit | ||
Maximum Random Access Time 45ns | ||
Address Bus Width 19bit | ||
Low Power Yes | ||
Mounting Type Surface Mount | ||
Package Type TSOP | ||
Pin Count 32 | ||
Dimensions 11.9 x 8.1 x 1mm | ||
Maximum Operating Supply Voltage 3.6 V | ||
Height 1mm | ||
Width 8.1mm | ||
Minimum Operating Temperature -40 °C | ||
Maximum Operating Temperature +85 °C | ||
Length 11.9mm | ||
Minimum Operating Supply Voltage 2.7 V | ||
Low Power SRAM, RMLV Series, Renesas Electronics
The RMLV Series of high performance advanced static RAMs has realized higher density, low current consumption, and offers low power standby power dissipation.
Single 2.7V to 3.6V power supply
Access time: 45ns (max.)
Equal access and cycle times
Common data input and output with three state output
All inputs and outputs are TTL compatible
Suitable for battery backup operation
Access time: 45ns (max.)
Equal access and cycle times
Common data input and output with three state output
All inputs and outputs are TTL compatible
Suitable for battery backup operation
SRAM (Static Random Access Memory)
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