Infineon 650 V 12 A Rectifier & Schottky Diode Rectifier Diode 2-Pin TO-220 IDW12G65C5XKSA1
- RS-artikelnummer:
- 273-2952
- Tillv. art.nr:
- IDW12G65C5XKSA1
- Tillverkare / varumärke:
- Infineon
Mängdrabatt möjlig
Antal (1 rör med 30 enheter)*
842,70 kr
(exkl. moms)
1 053,30 kr
(inkl. moms)
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- 240 enhet(er) är redo att levereras
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Enheter | Per enhet | Per Rør* |
|---|---|---|
| 30 - 30 | 28,09 kr | 842,70 kr |
| 60 + | 25,924 kr | 777,72 kr |
*vägledande pris
- RS-artikelnummer:
- 273-2952
- Tillv. art.nr:
- IDW12G65C5XKSA1
- Tillverkare / varumärke:
- Infineon
Specifikationer
Datablad
Lagstiftning och ursprungsland
Produktdetaljer
Hitta liknande produkter genom att välja ett eller flera attribut.
Välj alla | Attribut | Värde |
|---|---|---|
| Brand | Infineon | |
| Mount Type | Through Hole | |
| Product Type | Rectifier & Schottky Diode | |
| Package Type | TO-220 | |
| Maximum Continuous Forward Current If | 12A | |
| Peak Reverse Repetitive Voltage Vrrm | 650V | |
| Diode Configuration | Single | |
| Series | 5th Generation thinQ!TM | |
| Rectifier Type | Rectifier Diode | |
| Pin Count | 2 | |
| Peak Non-Repetitive Forward Surge Current Ifsm | 71A | |
| Maximum Forward Voltage Vf | 1.5V | |
| Minimum Operating Temperature | -55°C | |
| Peak Reverse Current Ir | 1350μA | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Välj alla | ||
|---|---|---|
Brand Infineon | ||
Mount Type Through Hole | ||
Product Type Rectifier & Schottky Diode | ||
Package Type TO-220 | ||
Maximum Continuous Forward Current If 12A | ||
Peak Reverse Repetitive Voltage Vrrm 650V | ||
Diode Configuration Single | ||
Series 5th Generation thinQ!TM | ||
Rectifier Type Rectifier Diode | ||
Pin Count 2 | ||
Peak Non-Repetitive Forward Surge Current Ifsm 71A | ||
Maximum Forward Voltage Vf 1.5V | ||
Minimum Operating Temperature -55°C | ||
Peak Reverse Current Ir 1350μA | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
The Infineon SiC schottky barrier diode has compact design and thinwafer technology, the new family of products shows improved efficiency over all load conditions, resulting from both the improved thermal characteristics and a lower figure of merit. It ha
Highest softness factor for ultimate softness and low EMI filtering
For applications switching between 18 kHz and 40 kHz
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