Infineon 650 V 4 A Rectifier & Schottky Diode Rectifier Diode 2-Pin TO-220 IDH04G65C5XKSA2
- RS-artikelnummer:
- 273-2937
- Tillv. art.nr:
- IDH04G65C5XKSA2
- Tillverkare / varumärke:
- Infineon
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863,85 kr
(exkl. moms)
1 079,80 kr
(inkl. moms)
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Enheter | Per enhet | Per Rør* |
|---|---|---|
| 50 - 50 | 17,277 kr | 863,85 kr |
| 100 + | 16,034 kr | 801,70 kr |
*vägledande pris
- RS-artikelnummer:
- 273-2937
- Tillv. art.nr:
- IDH04G65C5XKSA2
- Tillverkare / varumärke:
- Infineon
Specifikationer
Datablad
Lagstiftning och ursprungsland
Produktdetaljer
Hitta liknande produkter genom att välja ett eller flera attribut.
Välj alla | Attribut | Värde |
|---|---|---|
| Brand | Infineon | |
| Product Type | Rectifier & Schottky Diode | |
| Mount Type | Through Hole | |
| Package Type | TO-220 | |
| Maximum Continuous Forward Current If | 4A | |
| Peak Reverse Repetitive Voltage Vrrm | 650V | |
| Series | 5th Generation thinQ!TM | |
| Diode Configuration | Single | |
| Rectifier Type | Rectifier Diode | |
| Pin Count | 2 | |
| Peak Non-Repetitive Forward Surge Current Ifsm | 38A | |
| Maximum Forward Voltage Vf | 1.5V | |
| Minimum Operating Temperature | -55°C | |
| Peak Reverse Current Ir | 70μA | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | J-STD20 and JESD22 | |
| Automotive Standard | No | |
| Välj alla | ||
|---|---|---|
Brand Infineon | ||
Product Type Rectifier & Schottky Diode | ||
Mount Type Through Hole | ||
Package Type TO-220 | ||
Maximum Continuous Forward Current If 4A | ||
Peak Reverse Repetitive Voltage Vrrm 650V | ||
Series 5th Generation thinQ!TM | ||
Diode Configuration Single | ||
Rectifier Type Rectifier Diode | ||
Pin Count 2 | ||
Peak Non-Repetitive Forward Surge Current Ifsm 38A | ||
Maximum Forward Voltage Vf 1.5V | ||
Minimum Operating Temperature -55°C | ||
Peak Reverse Current Ir 70μA | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals J-STD20 and JESD22 | ||
Automotive Standard No | ||
The Infineon schottky diodes generation 5 in a DPAK real2pin package represents leading edge technology for SiC schottky barrier diodes. It has very high quality and high volume manufacturing capability.
Highly stable switching performance
Reduced cooling requirements
Reduced risks of thermal runaway
RoHS compliant
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