Infineon 650 V 10 A Rectifier & Schottky Diode Rectifier Diode 2-Pin TO-220
- RS-artikelnummer:
- 273-2943
- Tillv. art.nr:
- IDH10G65C5XKSA2
- Tillverkare / varumärke:
- Infineon
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43,68 kr
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Enheter | Per enhet |
|---|---|
| 1 - 9 | 43,68 kr |
| 10 - 24 | 39,76 kr |
| 25 - 49 | 36,18 kr |
| 50 - 99 | 33,71 kr |
| 100 + | 31,14 kr |
*vägledande pris
- RS-artikelnummer:
- 273-2943
- Tillv. art.nr:
- IDH10G65C5XKSA2
- Tillverkare / varumärke:
- Infineon
Specifikationer
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Lagstiftning och ursprungsland
Produktdetaljer
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Välj alla | Attribut | Värde |
|---|---|---|
| Brand | Infineon | |
| Mount Type | Through Hole | |
| Product Type | Rectifier & Schottky Diode | |
| Package Type | TO-220 | |
| Maximum Continuous Forward Current If | 10A | |
| Peak Reverse Repetitive Voltage Vrrm | 650V | |
| Diode Configuration | Single | |
| Series | 5th Generation thinQ! TM 650V SiC Schottky Diode | |
| Rectifier Type | Rectifier Diode | |
| Pin Count | 2 | |
| Minimum Operating Temperature | -55°C | |
| Maximum Forward Voltage Vf | 2.1V | |
| Peak Non-Repetitive Forward Surge Current Ifsm | 82A | |
| Peak Reverse Current Ir | 2μA | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS | |
| Length | 10.2mm | |
| Height | 15.95mm | |
| Automotive Standard | No | |
| Välj alla | ||
|---|---|---|
Brand Infineon | ||
Mount Type Through Hole | ||
Product Type Rectifier & Schottky Diode | ||
Package Type TO-220 | ||
Maximum Continuous Forward Current If 10A | ||
Peak Reverse Repetitive Voltage Vrrm 650V | ||
Diode Configuration Single | ||
Series 5th Generation thinQ! TM 650V SiC Schottky Diode | ||
Rectifier Type Rectifier Diode | ||
Pin Count 2 | ||
Minimum Operating Temperature -55°C | ||
Maximum Forward Voltage Vf 2.1V | ||
Peak Non-Repetitive Forward Surge Current Ifsm 82A | ||
Peak Reverse Current Ir 2μA | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS | ||
Length 10.2mm | ||
Height 15.95mm | ||
Automotive Standard No | ||
The Infineon schottky diodes generation 5 in a DPAK real2pin package represents leading edge technology for SiC schottky barrier diodes. It has very high quality and high volume manufacturing capability.
Highly stable switching performance
Reduced cooling requirements
Reduced risks of thermal runaway
RoHS compliant
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