Infineon 650 V 2 A Rectifier & Schottky Diode Rectifier Diode 2-Pin TO-220 IDH02G65C5XKSA2
- RS-artikelnummer:
- 273-2935
- Tillv. art.nr:
- IDH02G65C5XKSA2
- Tillverkare / varumärke:
- Infineon
Mängdrabatt möjlig
Antal (1 rör med 50 enheter)*
550,35 kr
(exkl. moms)
687,95 kr
(inkl. moms)
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- 400 enhet(er) är redo att levereras
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Enheter | Per enhet | Per Rør* |
|---|---|---|
| 50 - 50 | 11,007 kr | 550,35 kr |
| 100 + | 10,214 kr | 510,70 kr |
*vägledande pris
- RS-artikelnummer:
- 273-2935
- Tillv. art.nr:
- IDH02G65C5XKSA2
- Tillverkare / varumärke:
- Infineon
Specifikationer
Datablad
Lagstiftning och ursprungsland
Produktdetaljer
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Välj alla | Attribut | Värde |
|---|---|---|
| Brand | Infineon | |
| Product Type | Rectifier & Schottky Diode | |
| Mount Type | Through Hole | |
| Package Type | TO-220 | |
| Maximum Continuous Forward Current If | 2A | |
| Peak Reverse Repetitive Voltage Vrrm | 650V | |
| Series | 5th Generation thinQ | |
| Diode Configuration | Single | |
| Rectifier Type | Rectifier Diode | |
| Pin Count | 2 | |
| Peak Reverse Current Ir | 0.035mA | |
| Maximum Forward Voltage Vf | 1.5V | |
| Peak Non-Repetitive Forward Surge Current Ifsm | 23A | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Välj alla | ||
|---|---|---|
Brand Infineon | ||
Product Type Rectifier & Schottky Diode | ||
Mount Type Through Hole | ||
Package Type TO-220 | ||
Maximum Continuous Forward Current If 2A | ||
Peak Reverse Repetitive Voltage Vrrm 650V | ||
Series 5th Generation thinQ | ||
Diode Configuration Single | ||
Rectifier Type Rectifier Diode | ||
Pin Count 2 | ||
Peak Reverse Current Ir 0.035mA | ||
Maximum Forward Voltage Vf 1.5V | ||
Peak Non-Repetitive Forward Surge Current Ifsm 23A | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
The Infineon schottky diodes generation 5 in a DPAK real2pin package represents leading edge technology for SiC schottky barrier diodes. It has very high quality and high volume manufacturing capability.
Highly stable switching performance
Reduced cooling requirements
Reduced risks of thermal runaway
RoHS compliant
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