STMicroelectronics 650 V 10 A Diode 3-Pin D2PAK STPSC10H065G2-TR
- RS-artikelnummer:
- 229-2096
- Tillv. art.nr:
- STPSC10H065G2-TR
- Tillverkare / varumärke:
- STMicroelectronics
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207,65 kr
(exkl. moms)
259,55 kr
(inkl. moms)
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- Dessutom levereras 185 enhet(er) från den 30 januari 2026
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Enheter | Per enhet | Per förpackning* |
|---|---|---|
| 5 - 5 | 41,53 kr | 207,65 kr |
| 10 - 95 | 38,012 kr | 190,06 kr |
| 100 - 245 | 35,124 kr | 175,62 kr |
| 250 - 495 | 32,636 kr | 163,18 kr |
| 500 + | 31,764 kr | 158,82 kr |
*vägledande pris
- RS-artikelnummer:
- 229-2096
- Tillv. art.nr:
- STPSC10H065G2-TR
- Tillverkare / varumärke:
- STMicroelectronics
Specifikationer
Datablad
Lagstiftning och ursprungsland
Produktdetaljer
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Välj alla | Attribut | Värde |
|---|---|---|
| Brand | STMicroelectronics | |
| Mount Type | Through Hole | |
| Product Type | Diode | |
| Package Type | TO-263 | |
| Maximum Continuous Forward Current If | 10A | |
| Peak Reverse Repetitive Voltage Vrrm | 650V | |
| Diode Configuration | Single | |
| Pin Count | 3 | |
| Peak Reverse Current Ir | 85μA | |
| Minimum Operating Temperature | -40°C | |
| Maximum Forward Voltage Vf | 1.95V | |
| Peak Non-Repetitive Forward Surge Current Ifsm | 470A | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS | |
| Length | 15.3mm | |
| Height | 4.3mm | |
| Width | 10 mm | |
| Automotive Standard | No | |
| Välj alla | ||
|---|---|---|
Brand STMicroelectronics | ||
Mount Type Through Hole | ||
Product Type Diode | ||
Package Type TO-263 | ||
Maximum Continuous Forward Current If 10A | ||
Peak Reverse Repetitive Voltage Vrrm 650V | ||
Diode Configuration Single | ||
Pin Count 3 | ||
Peak Reverse Current Ir 85μA | ||
Minimum Operating Temperature -40°C | ||
Maximum Forward Voltage Vf 1.95V | ||
Peak Non-Repetitive Forward Surge Current Ifsm 470A | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS | ||
Length 15.3mm | ||
Height 4.3mm | ||
Width 10 mm | ||
Automotive Standard No | ||
The STMicroelectronics STPSC10H065 is the 10 A, 650 V SiC diode is an ultrahigh performance power schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a schottky diode structure with a 650 V rating.
No reverse recovery charge in application current range
Switching behaviour independent of temperature
High forward surge capability
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