STMicroelectronics 650 V 4 A Diode 2-Pin D2PAK STPSC4H065B-TR
- RS-artikelnummer:
- 201-0882
- Tillv. art.nr:
- STPSC4H065B-TR
- Tillverkare / varumärke:
- STMicroelectronics
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Enheter | Per enhet | Per förpackning* |
|---|---|---|
| 10 - 40 | 15,59 kr | 155,90 kr |
| 50 - 90 | 14,661 kr | 146,61 kr |
| 100 - 240 | 13,866 kr | 138,66 kr |
| 250 - 490 | 13,093 kr | 130,93 kr |
| 500 + | 12,454 kr | 124,54 kr |
*vägledande pris
- RS-artikelnummer:
- 201-0882
- Tillv. art.nr:
- STPSC4H065B-TR
- Tillverkare / varumärke:
- STMicroelectronics
Specifikationer
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Produktdetaljer
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Välj alla | Attribut | Värde |
|---|---|---|
| Brand | STMicroelectronics | |
| Mount Type | Surface | |
| Product Type | Diode | |
| Package Type | TO-263 | |
| Maximum Continuous Forward Current If | 4A | |
| Peak Reverse Repetitive Voltage Vrrm | 650V | |
| Series | STPSC | |
| Diode Configuration | Single | |
| Pin Count | 2 | |
| Maximum Forward Voltage Vf | 2.25V | |
| Peak Reverse Current Ir | 35μA | |
| Peak Non-Repetitive Forward Surge Current Ifsm | 200A | |
| Minimum Operating Temperature | -40°C | |
| Maximum Operating Temperature | 175°C | |
| Length | 28.25mm | |
| Width | 10 mm | |
| Standards/Approvals | No | |
| Diameter | 3.75 mm | |
| Height | 4.5mm | |
| Automotive Standard | No | |
| Välj alla | ||
|---|---|---|
Brand STMicroelectronics | ||
Mount Type Surface | ||
Product Type Diode | ||
Package Type TO-263 | ||
Maximum Continuous Forward Current If 4A | ||
Peak Reverse Repetitive Voltage Vrrm 650V | ||
Series STPSC | ||
Diode Configuration Single | ||
Pin Count 2 | ||
Maximum Forward Voltage Vf 2.25V | ||
Peak Reverse Current Ir 35μA | ||
Peak Non-Repetitive Forward Surge Current Ifsm 200A | ||
Minimum Operating Temperature -40°C | ||
Maximum Operating Temperature 175°C | ||
Length 28.25mm | ||
Width 10 mm | ||
Standards/Approvals No | ||
Diameter 3.75 mm | ||
Height 4.5mm | ||
Automotive Standard No | ||
The STMicroelectronics 650V high surge silicon carbide power schottky diode has a current rating of 4A. It is an ultra high performance power schottky diode. It is manufactured using a silicon carbide substrate. Its high forward surge capability ensures good robustness during transient phases. This SiC diode will boost the performance in hard switching condition.
No reverse recovery charge in application current range
Switching behavior independent of temperature
High forward surge capability
Power efficient product
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