STMicroelectronics 650 V 4 A Diode 2-Pin D2PAK
- RS-artikelnummer:
- 201-0881
- Tillv. art.nr:
- STPSC4H065B-TR
- Tillverkare / varumärke:
- STMicroelectronics
Antal (1 rulle med 2500 enheter)*
28 582,50 kr
(exkl. moms)
35 727,50 kr
(inkl. moms)
GRATIS leverans för online beställningar över 500,00 kr
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- Leverans från den 02 juli 2026
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Enheter | Per enhet | Per rulle* |
|---|---|---|
| 2500 + | 11,433 kr | 28 582,50 kr |
*vägledande pris
- RS-artikelnummer:
- 201-0881
- Tillv. art.nr:
- STPSC4H065B-TR
- Tillverkare / varumärke:
- STMicroelectronics
Specifikationer
Datablad
Lagstiftning och ursprungsland
Produktdetaljer
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Välj alla | Attribut | Värde |
|---|---|---|
| Brand | STMicroelectronics | |
| Product Type | Diode | |
| Mount Type | Surface | |
| Package Type | TO-263 | |
| Maximum Continuous Forward Current If | 4A | |
| Peak Reverse Repetitive Voltage Vrrm | 650V | |
| Series | STPSC | |
| Diode Configuration | Single | |
| Pin Count | 2 | |
| Minimum Operating Temperature | -40°C | |
| Peak Reverse Current Ir | 35μA | |
| Maximum Forward Voltage Vf | 2.25V | |
| Peak Non-Repetitive Forward Surge Current Ifsm | 200A | |
| Maximum Operating Temperature | 175°C | |
| Height | 4.5mm | |
| Length | 28.25mm | |
| Width | 10 mm | |
| Standards/Approvals | No | |
| Diameter | 3.75 mm | |
| Automotive Standard | No | |
| Välj alla | ||
|---|---|---|
Brand STMicroelectronics | ||
Product Type Diode | ||
Mount Type Surface | ||
Package Type TO-263 | ||
Maximum Continuous Forward Current If 4A | ||
Peak Reverse Repetitive Voltage Vrrm 650V | ||
Series STPSC | ||
Diode Configuration Single | ||
Pin Count 2 | ||
Minimum Operating Temperature -40°C | ||
Peak Reverse Current Ir 35μA | ||
Maximum Forward Voltage Vf 2.25V | ||
Peak Non-Repetitive Forward Surge Current Ifsm 200A | ||
Maximum Operating Temperature 175°C | ||
Height 4.5mm | ||
Length 28.25mm | ||
Width 10 mm | ||
Standards/Approvals No | ||
Diameter 3.75 mm | ||
Automotive Standard No | ||
The STMicroelectronics 650V high surge silicon carbide power schottky diode has a current rating of 4A. It is an ultra high performance power schottky diode. It is manufactured using a silicon carbide substrate. Its high forward surge capability ensures good robustness during transient phases. This SiC diode will boost the performance in hard switching condition.
No reverse recovery charge in application current range
Switching behavior independent of temperature
High forward surge capability
Power efficient product
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