Infineon 1200 V 2 A Diode SiC Schottky 2-Pin DPAK
- RS-artikelnummer:
- 222-4826
- Tillv. art.nr:
- IDM02G120C5XTMA1
- Tillverkare / varumärke:
- Infineon
Antal (1 rulle med 2500 enheter)*
24 260,00 kr
(exkl. moms)
30 325,00 kr
(inkl. moms)
GRATIS leverans för online beställningar över 500,00 kr
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- Leverans från den 06 augusti 2026
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Enheter | Per enhet | Per rulle* |
|---|---|---|
| 2500 + | 9,704 kr | 24 260,00 kr |
*vägledande pris
- RS-artikelnummer:
- 222-4826
- Tillv. art.nr:
- IDM02G120C5XTMA1
- Tillverkare / varumärke:
- Infineon
Specifikationer
Datablad
Lagstiftning och ursprungsland
Produktdetaljer
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Välj alla | Attribut | Värde |
|---|---|---|
| Brand | Infineon | |
| Product Type | Diode | |
| Mount Type | Surface | |
| Package Type | TO-252 | |
| Maximum Continuous Forward Current If | 2A | |
| Peak Reverse Repetitive Voltage Vrrm | 1200V | |
| Diode Configuration | Silicon Carbide Schottky Diode | |
| Series | 5th Generation thinQ!TM | |
| Rectifier Type | SiC Schottky | |
| Pin Count | 2 | |
| Maximum Forward Voltage Vf | 2.3V | |
| Peak Non-Repetitive Forward Surge Current Ifsm | 37A | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Height | 10.4mm | |
| Length | 6.65mm | |
| Width | 2.35 mm | |
| Standards/Approvals | J-STD20 and JESD22 | |
| Automotive Standard | No | |
| Välj alla | ||
|---|---|---|
Brand Infineon | ||
Product Type Diode | ||
Mount Type Surface | ||
Package Type TO-252 | ||
Maximum Continuous Forward Current If 2A | ||
Peak Reverse Repetitive Voltage Vrrm 1200V | ||
Diode Configuration Silicon Carbide Schottky Diode | ||
Series 5th Generation thinQ!TM | ||
Rectifier Type SiC Schottky | ||
Pin Count 2 | ||
Maximum Forward Voltage Vf 2.3V | ||
Peak Non-Repetitive Forward Surge Current Ifsm 37A | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Height 10.4mm | ||
Length 6.65mm | ||
Width 2.35 mm | ||
Standards/Approvals J-STD20 and JESD22 | ||
Automotive Standard No | ||
The Infineon CoolSiC™ Schottky diode generation 5 1200 V, 2 A in a DPAK real2pin package, presents a leading edge technology for SiC Schottky Barrier diodes. The thin wafer technology, already introduced with G2, is now combined with a new merged pn junction improving diode surge current capabilities. The result is a series of products delivering market leading efficiency and more system reliability at an attractive cost point.
Revolutionary semiconductor material - Silicon Carbide
No reverse recovery current / No forward recovery
Temperature independent switching behavior
Low forward voltage even at high operating temperature
Tight forward voltage distribution
Excellent thermal performance
Extended surge current capability
Specified dv/dt ruggedness
Qualified according to JEDEC1) for target applications
Pb-free lead plating; RoHS compliant
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