Infineon 1.8 V 10 A SiC Schottky Diode Schottky 3-Pin DPAK
- RS-artikelnummer:
- 249-6926
- Tillv. art.nr:
- IDD10SG60CXTMA2
- Tillverkare / varumärke:
- Infineon
Antal (1 rulle med 2500 enheter)*
48 115,00 kr
(exkl. moms)
60 145,00 kr
(inkl. moms)
GRATIS leverans för online beställningar över 500,00 kr
Tillfälligt slut
- Leverans från den 21 maj 2026
Behöver du mer? Ange den kvantitet du behöver och klicka på "Kontrollera leveransdatum"
Enheter | Per enhet | Per rulle* |
|---|---|---|
| 2500 + | 19,246 kr | 48 115,00 kr |
*vägledande pris
- RS-artikelnummer:
- 249-6926
- Tillv. art.nr:
- IDD10SG60CXTMA2
- Tillverkare / varumärke:
- Infineon
Specifikationer
Datablad
Lagstiftning och ursprungsland
Produktdetaljer
Hitta liknande produkter genom att välja ett eller flera attribut.
Välj alla | Attribut | Värde |
|---|---|---|
| Brand | Infineon | |
| Product Type | SiC Schottky Diode | |
| Mount Type | Surface | |
| Package Type | TO-252 | |
| Maximum Continuous Forward Current If | 10A | |
| Peak Reverse Repetitive Voltage Vrrm | 1.8V | |
| Diode Configuration | Single | |
| Series | XDD10SG60 | |
| Rectifier Type | Schottky | |
| Pin Count | 3 | |
| Peak Reverse Current Ir | 860μA | |
| Maximum Forward Voltage Vf | 2.1V | |
| Minimum Operating Temperature | -55°C | |
| Peak Non-Repetitive Forward Surge Current Ifsm | 410A | |
| Maximum Operating Temperature | 175°C | |
| Peak Reverse Recovery Time trr | 10ns | |
| Standards/Approvals | RoHS, JEDEC1 | |
| Automotive Standard | No | |
| Välj alla | ||
|---|---|---|
Brand Infineon | ||
Product Type SiC Schottky Diode | ||
Mount Type Surface | ||
Package Type TO-252 | ||
Maximum Continuous Forward Current If 10A | ||
Peak Reverse Repetitive Voltage Vrrm 1.8V | ||
Diode Configuration Single | ||
Series XDD10SG60 | ||
Rectifier Type Schottky | ||
Pin Count 3 | ||
Peak Reverse Current Ir 860μA | ||
Maximum Forward Voltage Vf 2.1V | ||
Minimum Operating Temperature -55°C | ||
Peak Non-Repetitive Forward Surge Current Ifsm 410A | ||
Maximum Operating Temperature 175°C | ||
Peak Reverse Recovery Time trr 10ns | ||
Standards/Approvals RoHS, JEDEC1 | ||
Automotive Standard No | ||
The Infineon schottky diode has silicon carbide as revolutionary semiconductor material. It does not have forward and reverse recovery. It has temperature independent switching behaviour. It has high surge current capability.
Pb-free lead plating
RoHS compliant
Qualified according to JEDEC for target applications
Breakdown voltage tested at 20mA
Optimized for high temperature operation
Lowest Figure of Merit QC/IF
Relaterade länkar
- Infineon 1.8 V 10 A SiC Schottky Diode Schottky 3-Pin DPAK IDD10SG60CXTMA2
- Infineon 600 V 6 A SiC Schottky Diode Schottky 3-Pin DPAK
- Infineon 600 V 6 A SiC Schottky Diode Schottky 3-Pin DPAK IDD06SG60CXTMA2
- Infineon 1200 V 2 A Diode SiC Schottky 2-Pin DPAK
- Infineon 1200 V 2 A Diode SiC Schottky 2-Pin DPAK IDM02G120C5XTMA1
- Infineon 650 V 10 A SiC Schottky Diode Schottky 10-Pin HDSOP
- Infineon 650 V 10 A SiC Schottky Diode Schottky 10-Pin HDSOP IDDD06G65C6XTMA1
- Infineon 650 V 12 A SiC Schottky Diode Schottky 10-Pin HDSOP