onsemi 650 V 10 A Diode Schottky 5-Pin PQFN
- RS-artikelnummer:
- 214-8797
- Tillv. art.nr:
- FFSM1065B
- Tillverkare / varumärke:
- onsemi
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Vi vet inte om den här artikeln kommer tillbaka i lager, RS har för avsikt att ta bort den från vårt utbud snart.
- RS-artikelnummer:
- 214-8797
- Tillv. art.nr:
- FFSM1065B
- Tillverkare / varumärke:
- onsemi
Specifikationer
Datablad
Lagstiftning och ursprungsland
Produktdetaljer
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Välj alla | Attribut | Värde |
|---|---|---|
| Brand | onsemi | |
| Mount Type | Surface | |
| Product Type | Diode | |
| Package Type | PQFN | |
| Maximum Continuous Forward Current If | 10A | |
| Peak Reverse Repetitive Voltage Vrrm | 650V | |
| Rectifier Type | Schottky | |
| Pin Count | 5 | |
| Minimum Operating Temperature | -55°C | |
| Peak Non-Repetitive Forward Surge Current Ifsm | 42A | |
| Peak Reverse Current Ir | 40μA | |
| Maximum Forward Voltage Vf | 1.7V | |
| Maximum Operating Temperature | 175°C | |
| Width | 8 mm | |
| Standards/Approvals | No | |
| Height | 1.1mm | |
| Length | 8mm | |
| Automotive Standard | No | |
| Välj alla | ||
|---|---|---|
Brand onsemi | ||
Mount Type Surface | ||
Product Type Diode | ||
Package Type PQFN | ||
Maximum Continuous Forward Current If 10A | ||
Peak Reverse Repetitive Voltage Vrrm 650V | ||
Rectifier Type Schottky | ||
Pin Count 5 | ||
Minimum Operating Temperature -55°C | ||
Peak Non-Repetitive Forward Surge Current Ifsm 42A | ||
Peak Reverse Current Ir 40μA | ||
Maximum Forward Voltage Vf 1.7V | ||
Maximum Operating Temperature 175°C | ||
Width 8 mm | ||
Standards/Approvals No | ||
Height 1.1mm | ||
Length 8mm | ||
Automotive Standard No | ||
Silicon Carbide (SiC) Schottky Diode – EliteSiC, 10 A, 650 V, D2, Power88
Silicon Carbide (SiC) Schottky Diode – EliteSiC, 10 A, 650 V, D2, Power88
The ON Semiconductor FFSM series is silicon carbide schottky diodes use a completely new technology that provides superior switching performance and higher reliability compared to silicon. It is typically used in inverters, SMPS and UPS etc.
Highest efficiency
Faster operating frequency
Increased power density
Reduced EMI
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