onsemi 650 V 8 A SiC Schottky Schottky 5-Pin PQFN
- RS-artikelnummer:
- 214-8795
- Tillv. art.nr:
- FFSM0865B
- Tillverkare / varumärke:
- onsemi
Antal (1 rulle med 3000 enheter)*
38 955,00 kr
(exkl. moms)
48 693,00 kr
(inkl. moms)
GRATIS leverans för online beställningar över 500,00 kr
Tillfälligt slut
- Leverans från den 24 april 2026
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Enheter | Per enhet | Per rulle* |
|---|---|---|
| 3000 + | 12,985 kr | 38 955,00 kr |
*vägledande pris
- RS-artikelnummer:
- 214-8795
- Tillv. art.nr:
- FFSM0865B
- Tillverkare / varumärke:
- onsemi
Specifikationer
Datablad
Lagstiftning och ursprungsland
Produktdetaljer
Hitta liknande produkter genom att välja ett eller flera attribut.
Välj alla | Attribut | Värde |
|---|---|---|
| Brand | onsemi | |
| Mount Type | Surface | |
| Product Type | SiC Schottky | |
| Package Type | PQFN | |
| Maximum Continuous Forward Current If | 8A | |
| Peak Reverse Repetitive Voltage Vrrm | 650V | |
| Rectifier Type | Schottky | |
| Pin Count | 5 | |
| Minimum Operating Temperature | -55°C | |
| Peak Reverse Current Ir | 40μA | |
| Maximum Forward Voltage Vf | 1.7V | |
| Maximum Operating Temperature | 175°C | |
| Length | 8mm | |
| Standards/Approvals | No | |
| Width | 8 mm | |
| Height | 1.1mm | |
| Automotive Standard | No | |
| Välj alla | ||
|---|---|---|
Brand onsemi | ||
Mount Type Surface | ||
Product Type SiC Schottky | ||
Package Type PQFN | ||
Maximum Continuous Forward Current If 8A | ||
Peak Reverse Repetitive Voltage Vrrm 650V | ||
Rectifier Type Schottky | ||
Pin Count 5 | ||
Minimum Operating Temperature -55°C | ||
Peak Reverse Current Ir 40μA | ||
Maximum Forward Voltage Vf 1.7V | ||
Maximum Operating Temperature 175°C | ||
Length 8mm | ||
Standards/Approvals No | ||
Width 8 mm | ||
Height 1.1mm | ||
Automotive Standard No | ||
Silicon Carbide (SiC) Schottky Diode – EliteSiC, 8 A, 650 V, D2, Power88
Silicon Carbide (SiC) Schottky Diode – EliteSiC, 8 A, 650 V, D2, Power88
The ON Semiconductor FFSM series is silicon carbide schottky diodes use a completely new technology that provides superior switching performance and higher reliability compared to silicon. It is typically used in inverters, SMPS and UPS etc.
Highest efficiency
Faster operating frequency
Increased power density
Reduced EMI
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