Specifikationer

Datablad

Lagstiftning och ursprungsland

Produktdetaljer

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Välj alla	Attribut	Värde
	Brand	onsemi
	Mounting Type	Surface Mount
	Package Type	PQFN
	Maximum Continuous Forward Current	8A
	Peak Reverse Repetitive Voltage	650V
	Diode Configuration	Single
	Diode Type	Schottky
	Pin Count	3
	Number of Elements per Chip	1
	Diode Technology	Schottky
	Peak Non-Repetitive Forward Surge Current	430A

	Välj alla
	Brand onsemi
	Mounting Type Surface Mount
	Package Type PQFN
	Maximum Continuous Forward Current 8A
	Peak Reverse Repetitive Voltage 650V
	Diode Configuration Single
	Diode Type Schottky
	Pin Count 3
	Number of Elements per Chip 1
	Diode Technology Schottky
	Peak Non-Repetitive Forward Surge Current 430A

Datasheet FFSM0665A

Uppfyller ej RoHS

COO (Country of Origin):: PH

Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability to silicon. No reverse recovery current, temperature independent switching characteristics, and excellent thermal performance sets Silicon Carbide as the next generation of power semiconductor. System benefits include highest efficiency, faster operating frequency, increased power density, reduced EMI, and reduced system size and cost.

Max Junction Temperature 175 °C
High Surge Current Capacity
Positive Temperature Coefficient
No Reverse Recovery / No Forward Recovery
Applications
PFC
Industrial Power
Solar
EV Charger
UPS
Welding

onsemi 650V 8A, Schottky Diode, 3-Pin PQFN FFSM0665A

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