onsemi 650 V 11.6 A Schottky Diode Schottky 3-Pin DPAK
- RS-artikelnummer:
- 195-8715
- Tillv. art.nr:
- FFSD0865B-F085
- Tillverkare / varumärke:
- onsemi
Antal (1 rulle med 2500 enheter)*
33 207,50 kr
(exkl. moms)
41 510,00 kr
(inkl. moms)
GRATIS leverans för online beställningar över 500,00 kr
Tillfälligt slut
- Leverans från den 09 april 2026
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Enheter | Per enhet | Per rulle* |
|---|---|---|
| 2500 + | 13,283 kr | 33 207,50 kr |
*vägledande pris
- RS-artikelnummer:
- 195-8715
- Tillv. art.nr:
- FFSD0865B-F085
- Tillverkare / varumärke:
- onsemi
Specifikationer
Datablad
Lagstiftning och ursprungsland
Produktdetaljer
Hitta liknande produkter genom att välja ett eller flera attribut.
Välj alla | Attribut | Värde |
|---|---|---|
| Brand | onsemi | |
| Product Type | Schottky Diode | |
| Mount Type | Surface | |
| Package Type | TO-252 | |
| Maximum Continuous Forward Current If | 11.6A | |
| Peak Reverse Repetitive Voltage Vrrm | 650V | |
| Diode Configuration | Single | |
| Series | EliteSiC | |
| Rectifier Type | Schottky | |
| Pin Count | 3 | |
| Minimum Operating Temperature | -55°C | |
| Peak Reverse Current Ir | 160A | |
| Peak Non-Repetitive Forward Surge Current Ifsm | 42A | |
| Maximum Forward Voltage Vf | 2.4V | |
| Maximum Operating Temperature | 175°C | |
| Height | 2.39mm | |
| Standards/Approvals | Pb-Free, RoHS | |
| Length | 6.73mm | |
| Width | 6.22 mm | |
| Automotive Standard | AEC-Q101 | |
| Välj alla | ||
|---|---|---|
Brand onsemi | ||
Product Type Schottky Diode | ||
Mount Type Surface | ||
Package Type TO-252 | ||
Maximum Continuous Forward Current If 11.6A | ||
Peak Reverse Repetitive Voltage Vrrm 650V | ||
Diode Configuration Single | ||
Series EliteSiC | ||
Rectifier Type Schottky | ||
Pin Count 3 | ||
Minimum Operating Temperature -55°C | ||
Peak Reverse Current Ir 160A | ||
Peak Non-Repetitive Forward Surge Current Ifsm 42A | ||
Maximum Forward Voltage Vf 2.4V | ||
Maximum Operating Temperature 175°C | ||
Height 2.39mm | ||
Standards/Approvals Pb-Free, RoHS | ||
Length 6.73mm | ||
Width 6.22 mm | ||
Automotive Standard AEC-Q101 | ||
Silicon Carbide (SiC) Schottky Diode - EliteSiC, 8A, 650V, D2, DPAK Automotive Silicon Carbide (SiC) Schottky Diode, 650 V
Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability compared to Silicon. No reverse recovery current, temperature independent switching characteristics, and excellent thermal performance sets Silicon Carbide as the next generation of power semiconductor. System benefits include highest efficiency, faster operating frequency, increased power density, reduced EMI, and reduced system size & cost
Max Junction Temperature 175 °C
PPAP capable
High Surge Current Capacity
Positive Temperature Coefficient
Ease of Paralleling
No Reverse Recovery / No Forward Recovery
Applications
Automotive HEV-EV Onboard Chargers
Automotive HEV-EV DC-DC Converters
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