onsemi 650 V 11.6 A Schottky Diode Schottky 3-Pin DPAK FFSD0865B-F085
- RS-artikelnummer:
- 195-8716
- Tillv. art.nr:
- FFSD0865B-F085
- Tillverkare / varumärke:
- onsemi
Mängdrabatt möjlig
Antal (1 förpackning med 20 enheter)*
395,92 kr
(exkl. moms)
494,90 kr
(inkl. moms)
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- 1 260 enhet(er) är redo att levereras
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Enheter | Per enhet | Per förpackning* |
|---|---|---|
| 20 - 180 | 19,796 kr | 395,92 kr |
| 200 - 480 | 17,063 kr | 341,26 kr |
| 500 + | 14,795 kr | 295,90 kr |
*vägledande pris
- RS-artikelnummer:
- 195-8716
- Tillv. art.nr:
- FFSD0865B-F085
- Tillverkare / varumärke:
- onsemi
Specifikationer
Datablad
Lagstiftning och ursprungsland
Produktdetaljer
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Välj alla | Attribut | Värde |
|---|---|---|
| Brand | onsemi | |
| Product Type | Schottky Diode | |
| Mount Type | Surface | |
| Package Type | TO-252 | |
| Maximum Continuous Forward Current If | 11.6A | |
| Peak Reverse Repetitive Voltage Vrrm | 650V | |
| Diode Configuration | Single | |
| Series | EliteSiC | |
| Rectifier Type | Schottky | |
| Pin Count | 3 | |
| Peak Non-Repetitive Forward Surge Current Ifsm | 42A | |
| Peak Reverse Current Ir | 160A | |
| Minimum Operating Temperature | -55°C | |
| Maximum Forward Voltage Vf | 2.4V | |
| Maximum Operating Temperature | 175°C | |
| Width | 6.22 mm | |
| Height | 2.39mm | |
| Standards/Approvals | Pb-Free, RoHS | |
| Length | 6.73mm | |
| Automotive Standard | AEC-Q101 | |
| Välj alla | ||
|---|---|---|
Brand onsemi | ||
Product Type Schottky Diode | ||
Mount Type Surface | ||
Package Type TO-252 | ||
Maximum Continuous Forward Current If 11.6A | ||
Peak Reverse Repetitive Voltage Vrrm 650V | ||
Diode Configuration Single | ||
Series EliteSiC | ||
Rectifier Type Schottky | ||
Pin Count 3 | ||
Peak Non-Repetitive Forward Surge Current Ifsm 42A | ||
Peak Reverse Current Ir 160A | ||
Minimum Operating Temperature -55°C | ||
Maximum Forward Voltage Vf 2.4V | ||
Maximum Operating Temperature 175°C | ||
Width 6.22 mm | ||
Height 2.39mm | ||
Standards/Approvals Pb-Free, RoHS | ||
Length 6.73mm | ||
Automotive Standard AEC-Q101 | ||
Silicon Carbide (SiC) Schottky Diode - EliteSiC, 8A, 650V, D2, DPAK Automotive Silicon Carbide (SiC) Schottky Diode, 650 V
Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability compared to Silicon. No reverse recovery current, temperature independent switching characteristics, and excellent thermal performance sets Silicon Carbide as the next generation of power semiconductor. System benefits include highest efficiency, faster operating frequency, increased power density, reduced EMI, and reduced system size & cost
Max Junction Temperature 175 °C
PPAP capable
High Surge Current Capacity
Positive Temperature Coefficient
Ease of Paralleling
No Reverse Recovery / No Forward Recovery
Applications
Automotive HEV-EV Onboard Chargers
Automotive HEV-EV DC-DC Converters
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