onsemi 650 V 9.1 A Diode Schottky 3-Pin DPAK
- RS-artikelnummer:
- 194-5747
- Tillv. art.nr:
- FFSD0665B
- Tillverkare / varumärke:
- onsemi
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- RS-artikelnummer:
- 194-5747
- Tillv. art.nr:
- FFSD0665B
- Tillverkare / varumärke:
- onsemi
Specifikationer
Datablad
Lagstiftning och ursprungsland
Produktdetaljer
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Välj alla | Attribut | Värde |
|---|---|---|
| Brand | onsemi | |
| Mount Type | Surface | |
| Product Type | Diode | |
| Package Type | TO-252 | |
| Maximum Continuous Forward Current If | 9.1A | |
| Peak Reverse Repetitive Voltage Vrrm | 650V | |
| Diode Configuration | Single | |
| Rectifier Type | Schottky | |
| Pin Count | 3 | |
| Peak Non-Repetitive Forward Surge Current Ifsm | 493A | |
| Minimum Operating Temperature | -55°C | |
| Maximum Forward Voltage Vf | 2.4V | |
| Peak Reverse Current Ir | 160μA | |
| Maximum Operating Temperature | 175°C | |
| Width | 2.39 mm | |
| Height | 6.22mm | |
| Length | 6.73mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Välj alla | ||
|---|---|---|
Brand onsemi | ||
Mount Type Surface | ||
Product Type Diode | ||
Package Type TO-252 | ||
Maximum Continuous Forward Current If 9.1A | ||
Peak Reverse Repetitive Voltage Vrrm 650V | ||
Diode Configuration Single | ||
Rectifier Type Schottky | ||
Pin Count 3 | ||
Peak Non-Repetitive Forward Surge Current Ifsm 493A | ||
Minimum Operating Temperature -55°C | ||
Maximum Forward Voltage Vf 2.4V | ||
Peak Reverse Current Ir 160μA | ||
Maximum Operating Temperature 175°C | ||
Width 2.39 mm | ||
Height 6.22mm | ||
Length 6.73mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
Silicon Carbide (SiC) Schottky Diode – EliteSiC, 6 A, 650 V, D2, DPAK
Silicon Carbide (SiC) Schottky Diode – EliteSiC, 6 A, 650 V, D2, DPAK
Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability compared to Silicon. No reverse recovery current, temperature independent switching characteristics, and excellent thermal performance sets Silicon Carbide as the next generation of power semiconductor. System benefits include highest efficiency, faster operating frequency, increased power density, reduced EMI, and reduced system size and cost.
High UIS, Surge Current, and Avalanche
High Junction Temperature
Low Vf
No Qrr
49mJ @ 25C
Tj = 175C
1.41V
< 100nC
Applications
PFC
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