onsemi 1200 V 17 A Diode Schottky 2-Pin TO-247 FFSH10120A-F085
- RS-artikelnummer:
- 178-4429
- Tillv. art.nr:
- FFSH10120A-F085
- Tillverkare / varumärke:
- onsemi
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96,88 kr
(exkl. moms)
121,10 kr
(inkl. moms)
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Enheter | Per enhet |
|---|---|
| 1 - 9 | 96,88 kr |
| 10 + | 83,55 kr |
*vägledande pris
- RS-artikelnummer:
- 178-4429
- Tillv. art.nr:
- FFSH10120A-F085
- Tillverkare / varumärke:
- onsemi
Specifikationer
Datablad
Lagstiftning och ursprungsland
Produktdetaljer
Hitta liknande produkter genom att välja ett eller flera attribut.
Välj alla | Attribut | Värde |
|---|---|---|
| Brand | onsemi | |
| Mount Type | Through Hole | |
| Product Type | Diode | |
| Package Type | TO-247 | |
| Maximum Continuous Forward Current If | 17A | |
| Peak Reverse Repetitive Voltage Vrrm | 1200V | |
| Diode Configuration | Single | |
| Rectifier Type | Schottky | |
| Pin Count | 2 | |
| Peak Reverse Current Ir | 400μA | |
| Minimum Operating Temperature | -55°C | |
| Maximum Forward Voltage Vf | 1.75V | |
| Peak Non-Repetitive Forward Surge Current Ifsm | 850A | |
| Maximum Operating Temperature | 175°C | |
| Width | 4.82 mm | |
| Height | 20.82mm | |
| Standards/Approvals | No | |
| Diameter | 6.85 mm | |
| Length | 15.87mm | |
| Automotive Standard | AEC-Q101 | |
| Välj alla | ||
|---|---|---|
Brand onsemi | ||
Mount Type Through Hole | ||
Product Type Diode | ||
Package Type TO-247 | ||
Maximum Continuous Forward Current If 17A | ||
Peak Reverse Repetitive Voltage Vrrm 1200V | ||
Diode Configuration Single | ||
Rectifier Type Schottky | ||
Pin Count 2 | ||
Peak Reverse Current Ir 400μA | ||
Minimum Operating Temperature -55°C | ||
Maximum Forward Voltage Vf 1.75V | ||
Peak Non-Repetitive Forward Surge Current Ifsm 850A | ||
Maximum Operating Temperature 175°C | ||
Width 4.82 mm | ||
Height 20.82mm | ||
Standards/Approvals No | ||
Diameter 6.85 mm | ||
Length 15.87mm | ||
Automotive Standard AEC-Q101 | ||
- COO (Country of Origin):
- CN
Silicon Carbide (SiC) Schottky Diode - EliteSiC, 10A, 1200V, D1, TO-247-2L
Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability compared to Silicon. No reverse recovery current, temperature independent switching characteristics, and excellent thermal performance sets Silicon Carbide as the next generation of power semiconductor. System benefits include highest efficiency, faster operating frequency, increased power density, reduced EMI, and reduced system size & cost.
Max Junction Temperature 175 °C
No Reverse Recovery / No Forward Recovery
High Surge Current Capacity
Positive Temperature Coefficient
Ease of Paralleling
Applications:
Automotive HEV-EV Onboard Chargers
Automotive HEV-EV DC-DC Converters
End Products:
Automotive HEV-EV Onboard Chargers
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