onsemi 650 V 20 A Diode Schottky 2-Pin TO-247 FFSH2065B-F085
- RS-artikelnummer:
- 189-0432
- Tillv. art.nr:
- FFSH2065B-F085
- Tillverkare / varumärke:
- onsemi
Mängdrabatt möjlig
Antal (1 förpackning med 2 enheter)*
194,32 kr
(exkl. moms)
242,90 kr
(inkl. moms)
GRATIS leverans för online beställningar över 500,00 kr
Försörjningsbrist
- Dessutom levereras 338 enhet(er) från den 29 januari 2026
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Enheter | Per enhet | Per förpackning* |
|---|---|---|
| 2 - 18 | 97,16 kr | 194,32 kr |
| 20 + | 83,72 kr | 167,44 kr |
*vägledande pris
- RS-artikelnummer:
- 189-0432
- Tillv. art.nr:
- FFSH2065B-F085
- Tillverkare / varumärke:
- onsemi
Specifikationer
Datablad
Lagstiftning och ursprungsland
Produktdetaljer
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Välj alla | Attribut | Värde |
|---|---|---|
| Brand | onsemi | |
| Mount Type | Through Hole | |
| Product Type | Diode | |
| Package Type | TO-247 | |
| Maximum Continuous Forward Current If | 20A | |
| Peak Reverse Repetitive Voltage Vrrm | 650V | |
| Diode Configuration | Single | |
| Rectifier Type | Schottky | |
| Pin Count | 2 | |
| Peak Reverse Current Ir | 160μA | |
| Peak Non-Repetitive Forward Surge Current Ifsm | 889A | |
| Maximum Forward Voltage Vf | 2.4V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | No | |
| Height | 2.82mm | |
| Length | 15.87mm | |
| Width | 4.82 mm | |
| Automotive Standard | AEC-Q101 | |
| Välj alla | ||
|---|---|---|
Brand onsemi | ||
Mount Type Through Hole | ||
Product Type Diode | ||
Package Type TO-247 | ||
Maximum Continuous Forward Current If 20A | ||
Peak Reverse Repetitive Voltage Vrrm 650V | ||
Diode Configuration Single | ||
Rectifier Type Schottky | ||
Pin Count 2 | ||
Peak Reverse Current Ir 160μA | ||
Peak Non-Repetitive Forward Surge Current Ifsm 889A | ||
Maximum Forward Voltage Vf 2.4V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals No | ||
Height 2.82mm | ||
Length 15.87mm | ||
Width 4.82 mm | ||
Automotive Standard AEC-Q101 | ||
Silicon Carbide (SiC) Schottky Diode - EliteSiC, 20A, 650V, D2, TO-247-2L Automotive Silicon Carbide (SiC) Schottky Diode, 650 V
Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability compared to Silicon. No reverse recovery current, temperature independent switching characteristics, and excellent thermal performance sets Silicon Carbide as the next generation of power semiconductor. System benefits include highest efficiency, faster operating frequency, increased power density, reduced EMI, and reduced system size & cost
Max Junction Temperature 175 °C
High Surge Current Capacity
Positive Temperature Coefficient
Ease of Paralleling
No Reverse Recovery / No Forward Recovery
PPAP Capable
Applications
Automotive HEV-EV Onboard Chargers
Automotive HEV-EV DC-DC Converters
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