BGA5H1BN6E6327XTSA1 Infineon, RF Amplifier Low Noise, 18.1 dB 2690 MHz, 6-Pin TSNP-6-10

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RS-artikelnummer:
258-0656
Tillv. art.nr:
BGA5H1BN6E6327XTSA1
Tillverkare / varumärke:
Infineon
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Brand

Infineon

Amplifier Type

Low Noise

Typical Power Gain

18.1 dB

Typical Output Power

60mW

Typical Noise Figure

1.2dB

Maximum Operating Frequency

2690 MHz

Package Type

TSNP-6-10

Pin Count

6

The Infineon high gain low noise amplifier for LTE high band is LTE data rate can be significantly improved by using the Low Noise Amplifier. The integrated bypass function
increases the overall system dynamic range and leads to more flexibility in the RF front-end. In high gain mode the LNA offers best Noise Figure to ensure high data rates even on the LTE cell edge. Closer to the base station the bypass mode can be activated reducing current consumption.

Low current consumption of 8.5 mA
Multi-state control: Bypass- and high gain-Mode
Ultra small TSNP-6-10 leadless package
RF output internally matched to 50 Ohm
Low external component count

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