BGA7H1N6E6327XTSA1 Infineon, RF Amplifier Low Noise Amplifier, 12.5 dB 2690 MHz, 6-Pin TSNP-6-2
- RS-artikelnummer:
- 273-5223
- Tillv. art.nr:
- BGA7H1N6E6327XTSA1
- Tillverkare / varumärke:
- Infineon
Antal (1 rulle med 15000 enheter)*
67 530,00 kr
(exkl. moms)
84 420,00 kr
(inkl. moms)
GRATIS leverans för online beställningar över 500,00 kr
Tillfälligt slut
- Leverans från den 22 juli 2026
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Enheter | Per enhet | Per rulle* |
|---|---|---|
| 15000 + | 4,502 kr | 67 530,00 kr |
*vägledande pris
- RS-artikelnummer:
- 273-5223
- Tillv. art.nr:
- BGA7H1N6E6327XTSA1
- Tillverkare / varumärke:
- Infineon
Specifikationer
Datablad
Lagstiftning och ursprungsland
Produktdetaljer
Hitta liknande produkter genom att välja ett eller flera attribut.
Välj alla | Attribut | Värde |
|---|---|---|
| Brand | Infineon | |
| Amplifier Type | Low Noise Amplifier | |
| Typical Power Gain | 12.5 dB | |
| Typical Noise Figure | 0.6dB | |
| Number of Channels per Chip | 1 | |
| Maximum Operating Frequency | 2690 MHz | |
| Package Type | TSNP-6-2 | |
| Pin Count | 6 | |
| Välj alla | ||
|---|---|---|
Brand Infineon | ||
Amplifier Type Low Noise Amplifier | ||
Typical Power Gain 12.5 dB | ||
Typical Noise Figure 0.6dB | ||
Number of Channels per Chip 1 | ||
Maximum Operating Frequency 2690 MHz | ||
Package Type TSNP-6-2 | ||
Pin Count 6 | ||
- COO (Country of Origin):
- MY
The Infineon RF Amplifier is a front end low noise amplifier for LTE which covers a wide frequency range from 2300 MHz to 2690 MHz. The LNA provides 12.5 dB gain and 0.60 dB noise figure at a current consumption of 4.7 mA. This RF amplifier is base on Silicon Germanium technology. It operates from 1.5 V to 3.3 V supply voltage.
Pb free package
RoHS compliant
Low noise figure
Digitally on off switch
Low current consumption
Only 1 external SMD component necessary
RoHS compliant
Low noise figure
Digitally on off switch
Low current consumption
Only 1 external SMD component necessary
Relaterade länkar
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