Infineon 1Mbit NVRAM, 16-Pin SOIC, CY14V101QS-SF108XI
- RS-artikelnummer:
- 194-9096
- Tillv. art.nr:
- CY14V101QS-SF108XI
- Tillverkare / varumärke:
- Infineon
Lagerinformation är för närvarande otillgänglig
- RS-artikelnummer:
- 194-9096
- Tillv. art.nr:
- CY14V101QS-SF108XI
- Tillverkare / varumärke:
- Infineon
Specifikationer
Datablad
Lagstiftning och ursprungsland
Produktdetaljer
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Välj alla | Attribut | Värde |
|---|---|---|
| Brand | Infineon | |
| Memory Size | 1Mbit | |
| Organisation | 128K x 8 bit | |
| Data Bus Width | 8bit | |
| Mounting Type | Surface Mount | |
| Package Type | SOIC | |
| Pin Count | 16 | |
| Dimensions | 10.49 x 7.59 x 2.36mm | |
| Length | 10.49mm | |
| Width | 7.59mm | |
| Height | 2.36mm | |
| Maximum Operating Supply Voltage | 3.6 V | |
| Maximum Operating Temperature | +85 °C | |
| Minimum Operating Supply Voltage | 2.7 V | |
| Number of Bits per Word | 8bit | |
| Number of Words | 128K | |
| Minimum Operating Temperature | -40 °C | |
| Välj alla | ||
|---|---|---|
Brand Infineon | ||
Memory Size 1Mbit | ||
Organisation 128K x 8 bit | ||
Data Bus Width 8bit | ||
Mounting Type Surface Mount | ||
Package Type SOIC | ||
Pin Count 16 | ||
Dimensions 10.49 x 7.59 x 2.36mm | ||
Length 10.49mm | ||
Width 7.59mm | ||
Height 2.36mm | ||
Maximum Operating Supply Voltage 3.6 V | ||
Maximum Operating Temperature +85 °C | ||
Minimum Operating Supply Voltage 2.7 V | ||
Number of Bits per Word 8bit | ||
Number of Words 128K | ||
Minimum Operating Temperature -40 °C | ||
- COO (Country of Origin):
- PH
The Cypress CY14V101QS combines a 1-Mbit nvSRAM with a QPI interface. The QPI allows writing and reading the memory in either a single (one I/O channel for one bit per clock cycle), dual (two I/O channels for two bits per clock cycle), or quad (four I/O channels for four bits per clock cycle) through the use of selected opcodes. The memory is organized as 128Kbytes each consisting of SRAM and nonvolatile SONOS Quantum Trap cells. The SRAM provides infinite read and write cycles, while the nonvolatile cells provide highly reliable storage of data. Data transfers from SRAM to the nonvolatile cells (STORE operation) take place automatically at power-down. On power-up, data is restored to the SRAM from the nonvolatile cells (RECALL operation). You can also initiate the STORE and RECALL operations through SPI instructions.
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